Substrate bonding system and method of modifying the same

• US 9,299,594 B2
• Filed: 07/27/2010
• Issued: 03/29/2016
• Est. Priority Date: 07/27/2010
• Status: Active Grant

• Current Assignee: Bayer Healthcare AG (Bayer AG), Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Wu, Weng-Jin, Lin, Jing-Cheng, Lin, Yu-Liang
• Primary Examiner(s): KOCH, GEORGE R
• Application Number:
  US12/844,113
• Publication Number:
  US 20120024456A1
• Time in Patent Office: 2,072 Days
• Field of Search: 156/358, 156/359, 156/360, 156/583.1, 156/583.3, 156/583.91, 156/581, 156/258.A, 156/258.R
• US Class Current: 1/1
• CPC Class Codes: H01L 21/67092 Apparatus for mechanical treatment or grinding or cutting, see the relevant groups in subclasses B24B or B28D
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/6836 Wafer tapes, e.g. grinding or dicing support tapes adhesive tapes in general C09J7/20
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2221/6834 used to protect an active side of a device or wafer
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05009 Bonding area integrally formed with a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/0557 the external layer being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/06181 On opposite sides of the body
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/16146 the bump connector connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/81 using a bump connector
• CPC Class Codes: H01L 2224/81005 : being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/81191 : wherein the bump connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81192 : wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06541 : Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 2225/06548 : Conductive via connections through the substrate, container, or encapsulation
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 25/0652 : the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/3511 : Warping

Abstract

The embodiments described provide apparatus and methods for bonding wafers to carriers with the surface contours of plates facing the substrates or carriers are modified either by re-shaping, by using height adjusters, by adding shim(s), or by zoned temperature control. The modified surface contours of such plates compensate the effects that may cause the non-planarity of bonded substrates.

Claims

1. A substrate bonding system, comprising:

an upper assembly, wherein the upper assembly includes

an upper body with upper heating elements; and

an upper plate; and

a lower assembly, wherein the lower assembly includes

a lower plate facing the upper plate, wherein the lower plate supports a substrate during a bonding process;

a lower body with lower heating elements;

a support structure for the lower body; and

at least one shim placed between the support structure for the lower body and the lower plate, the at least one shim positioned for improving a planarity of a surface of the substrate after the substrate is bonded to a carrier,

wherein the at least one shim is not in direct contact with the substrate,

wherein the lower plate has an outermost surface configured to be in contact with the substrate or the carrier and having a center portion and an edge portion, and

wherein the center portion of the outermost surface of the lower plate is higher than the edge portion of the outermost surface of the lower plate during a period the lower heating elements are not operating.

2. The substrate bonding system of claim 1, wherein the shim is placed at the center region below the substrate.

3. The substrate bonding system of claim 1, wherein a thickness of a thickest region of the shim is between about 10 μ

m to about 20 μ

m.

4. The substrate bonding system of claim 1, wherein the shim has a diameter between about 10 mm to about 25 mm.

5. A substrate bonding system, comprising:

an upper assembly, wherein the upper assembly includes

an upper body with upper heating elements; and

an upper plate; and

a lower assembly, wherein the lower assembly includes

a lower plate facing the upper plate, wherein a substrate to be bonded is placed on the lower plate during a bonding process;

a lower body with lower heating elements;

a support structure for the lower body; and

a plurality of height adjusters under the support structure,

wherein the heights of the plurality adjusters are adjustable to change a shape of an outermost surface the lower plate,

wherein the outermost surface is configured to be in contact with the substrate or the carrier and having a center portion and an edge portion, and

wherein the center portion of the outermost surface of the lower plate is higher than the edge portion of the outermost surface of the lower plate during a period the lower heating elements are not operating.

6. The substrate bonding system of claim 5, wherein each of the height adjusters includes an upper bolt, a lower bolt and a nut connecting the upper and the lower bolts, and wherein the upper bolt and the lower bolt can be adjusted to change the height of the height adjuster.

7. The substrate bonding system of claim 5, wherein the plurality of height adjusters are arranged in a number of symmetric rows under the support structure.

8. The substrate bonding system of claim 7, wherein the number rows of the plurality of height adjusters is greater than or equal to 3.

9. The substrate bonding system of claim 5, wherein the heights of the plurality of height adjusters are adjusted according to zones the plurality of height adjusters are in.

10. A substrate bonding system, comprising:

an upper assembly, wherein the upper assembly includes;

an upper body with upper heating elements spread across the upper body; and

an upper plate;

a lower assembly, wherein the lower assembly includes

a lower plate facing the upper plate, wherein the upper plate and the lower plate are configured to be in direct contact with at least one of first or second sets of bonding materials during a bonding process, the first set of bonding materials including a first carrier and a first substrate, the second set of bonding materials including a second carrier and a second substrate;

a lower body with lower heating elements spread across the lower body, wherein each of the upper and lower heating elements is independently controllable;

a support structure under the lower body; and

at least one shim between the support structure and the lower body; and

a controller coupled to the upper and lower heating elements, the controller configured to control the upper and lower heating elements, during the bonding process of the second set of bonding materials and in accordance with a measured thickness profile of a first bonded sandwich of the first substrate and the first carrier, to improve planarity of a surface of the second substrate after the second substrate is bonded to the second carrier.

11. The substrate bonding system of claim 10, wherein the upper and lower heating elements are divided into zones to be controlled according to the zones.

12. The substrate bonding system of claim 11, wherein the zones are concentric.

13. The substrate bonding system of claim 10, wherein the at least one shim is under a center region of the first substrate.

14. A substrate bonding system, comprising:

an upper assembly, wherein the upper assembly includes

an upper body with upper heating elements; and

a solid upper plate; and

a lower assembly, wherein the lower assembly includes

a solid lower plate facing the upper plate, wherein a substrate and a carrier to be bonded are placed between the upper and lower plates during a bonding process, and wherein outermost surfaces of the upper and the lower plates for facing the substrate and the carrier are shaped to improve planarity of a surface of the substrate after the substrate is bonded to the carrier; and

a lower body with lower heating elements,

wherein the solid lower plate is thicker at a center portion than at an edge portion at room temperature, and the solid upper plate is thicker a center portion than at an edge portion at room temperature,

wherein the upper and lower heating elements are operable to maintain process temperature,

wherein the outermost surface of the upper plate is configured to be in contact with the substrate or the carrier and is non-flat at the room temperature,

wherein the outermost surface of the lower plate is configured to be in contact with the substrate or the carrier and is non-flat at the room temperature, and

wherein the outermost surfaces of the upper and the lower plates at the process temperature are flatter than at the room temperature.

15. The substrate bonding system of claim 14, wherein the surface of the substrate faces outward after the substrate is bonded to the carrier.

16. The substrate bonding system of claim 14, wherein the upper plate and the lower plate are thinner at corresponding edge regions and thicker in corresponding center regions.

17. The substrate bonding system of claim 14, wherein the outermost surface of the upper plate is concaved facing down and the outermost surface of the lower plate is convexed facing up.

18. A substrate bonding system, comprising:

an upper assembly including;

an upper body with upper heating elements; and

an upper plate; and

a lower assembly including;

a lower plate facing the upper plate, the lower plate being configured to support a substrate to be bonded during a bonding process;

a lower body with lower heating elements; and

a means for modifying an outermost surface of the lower plate according to a thickness profile of a previously bonded substrate, wherein the outermost surface of the lower plate is configured to be in contact with the substrate to be bonded and has a center portion and an edge portion, and the means for modifying the outermost surface of the lower plate comprises;

a plurality of height adjustment units under the lower body,

wherein the center portion of the lower plate is thicker than the edge portion of the lower plate during a period the lower heating elements are not operating.

19. The substrate bonding system of claim 18, wherein the means for modifying the outermost surface of the lower plate further comprises:

a support structure under the lower body and above the plurality of height adjustment units.

20. The substrate bonding system of claim 18, wherein heights of the plurality of height adjustment units are individually adjustable.