3D packages and methods for forming the same

• US 9,299,649 B2
• Filed: 02/08/2013
• Issued: 03/29/2016
• Est. Priority Date: 02/08/2013
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chiu, Tzu-Wei, Hu, Hsien-Pin, Hsu, Kuo-Ching, Hou, Shang-Yun, Jeng, Shin-Puu, Hsieh, Cheng-Hsien
• Primary Examiner(s): Page, Dale E
• Application Number:
  US13/763,335
• Publication Number:
  US 20140225258A1
• Time in Patent Office: 1,145 Days
• Field of Search: 257/E23.062, 257/E23.175, 257/668, 257/698, 257/738, 257/739, 257/700, 257/758, 257/773, 257/774, 257/776, 174/250, 174/258, 174260-262, 174/264, 174/266, 361/792, 361/767, 361/720, 361/809, 361/810, 438/118, 438/667, 438/123
• US Class Current: 1/1
• CPC Class Codes: H01L 21/4853 Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
• CPC Class Codes: H01L 21/4857 Multilayer substrates multilayer metallisation on monolayer substrate H01L21/4846
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68318 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• CPC Class Codes: H01L 2221/68345 used as a support during the manufacture of self supporting substrates
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 23/49811 Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 23/49816 Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49894 Materials of the insulating layers or coatings

Abstract

Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a semiconductor device comprising an interconnecting structure consisting of a plurality of thin film layers and a plurality of metal layers disposed therein, each of the plurality of metal layers having substantially a same top surface area, and a die comprising an active surface and a backside surface opposite the active surface, the active surface being directly coupled to a first side of the interconnecting structure. The semiconductor device further comprises a first connector directly coupled to a second side of the interconnecting structure, the second side being opposite the first side.

Claims

1. A semiconductor device comprising:

an interconnecting structure consisting of a plurality of thin film layers and a plurality of metal layers disposed therein, each of the plurality of metal layers having substantially a same top surface area, the interconnecting structure having a first side and a second side, each of the first side and the second side being substantially planar, the first side comprising a major surface of a first thin film layer of the plurality of thin film layers and a first surface of the respective metal layer of the plurality of metal layers disposed in the first thin film layer, the major surface of the first thin film layer and the first surface of the respective metal layer facing a first direction, the second side comprising a major surface of a second thin film layer of the plurality of thin film layers and a second surface of the respective metal layer of the plurality of metal layers disposed in the second thin film layer, the major surface of the second thin film layer and the second surface of the respective metal layer facing a second direction, the second direction being opposite the first direction, the plurality of metal layers being between the first side and the second side of the interconnecting structure;

a die comprising an active surface and a backside surface opposite the active surface, the active surface being directly coupled to the first side of the interconnecting structure; and

a first connector directly coupled to the second side of the interconnecting structure, the second side being opposite the first side.

2. The semiconductor device of claim 1, wherein the interconnecting structure is free from through substrate vias.

3. The semiconductor device of claim 1, wherein the interconnecting structure is free from active and passive devices.

4. The semiconductor device of claim 1 further comprising a first substrate directly coupled to the first connector.

5. The semiconductor device of claim 1, wherein the first connector comprises a solder ball, a metal pillar, a micro bump, or a controlled collapse chip connection bump.

6. The semiconductor device of claim 1 further comprising:

a second connector directly coupled to the first side of the interconnecting structure;

a third connector directly coupled to the active surface of the die, the second connector and the third connector directly coupled together; and

an underfill surrounding the second and third connectors, the underfill being between the active surface of the die and the first side of the interconnecting structure.

7. The semiconductor device of claim 1, wherein each of the plurality of metal layers comprises a metal line and a metal via, the metal line and metal via being disposed in an inter-metal dielectric.

16. The semiconductor device of claim 1, wherein each of the plurality of thin film layers comprises an etch stop layer and an inter-metal dielectric (IMD).

8. A semiconductor device comprising:

an interconnecting structure, the interconnecting structure comprising;

a first metal line disposed in a first dielectric layer, the first metal line having an upper surface substantially coplanar with an upper surface of the first dielectric layer, the upper surface of the first metal line being a first side of the interconnecting structure;

a second metal line disposed in a second dielectric layer, the second metal line having a lower surface substantially coplanar with a lower surface of the second dielectric layer, the lower surface of the second metal line being a second side of the interconnecting structure, the first metal line and the second metal line being substantially aligned; and

a set of metal lines disposed in a region extending from the first metal line to the second metal line, each of the set of metal lines disposed in a respective dielectric layer;

a first passivation layer on the first side of the interconnecting structure, the first passivation layer having a substantially planar surface, the substantially planar surface of the first passivation layer directly adjoining the first metal line and the first dielectric layer;

a second passivation layer on the second side of the interconnecting structure, the second passivation layer having a substantially planar surface, the substantially planar surface of the second passivation layer directly adjoining the second metal line and the second dielectric layer;

a first connector extending through the first passivation layer and contacting the first metal line;

a die comprising an active surface and a backside surface opposite the active surface, the active surface comprising a second connector, the second connector being electrically coupled to the first connector, the active surface being substantially parallel to the upper surface of the first metal line and the upper surface of the second metal line; and

a third connector extending through the second passivation layer and contacting the second metal line, the first connector and the third connector being substantially aligned.

9. The semiconductor device of claim 8, wherein the interconnecting structure is free from through substrate vias.

10. The semiconductor device of claim 8, wherein the interconnecting structure is free from active and passive devices.

11. The semiconductor device of claim 8, wherein the set of the metal lines further comprises:

a third metal line disposed in a third dielectric layer, the third metal line having an upper surface substantially parallel with the upper surfaces of the first and second metal lines, the third metal line being coupled to the first metal line by a first via; and

a fourth metal line disposed in a fourth dielectric layer, the third and fourth metal lines being between the first metal line and the second metal line, the fourth metal line having an upper surface substantially parallel with the upper surfaces of the first, second, and third metal lines, the fourth metal line being coupled to the second metal line by a second via and the fourth metal line being coupled to the third metal line by a third via.

12. The semiconductor device of claim 8 further comprising a substrate over the second side of the interconnecting structure, the substrate having a contact, the contact coupled to and directly contacting the third connector.

13. The semiconductor device of claim 12, wherein the third connector comprises a controlled collapse chip connection bump and the contact comprises a pre-solder layer.

14. The semiconductor device of claim 8, wherein the first metal line, the second metal line, and each of the set of the metal lines have top surface areas that are substantially equal.

15. The semiconductor device of claim 8 further comprising:

a polymer layer on the second passivation layer, the third connector extending along the polymer layer and extending through the polymer layer and the second passivation layer to contact the second metal line.

17. A semiconductor device comprising:

an interconnecting structure consisting of a plurality of thin film layers and a plurality of metal layers disposed therein, the interconnecting structure having a first side and a second side, the first side comprising a first metal layer of the plurality of metal layers and a first thin film layer of the plurality of thin film layers, the first metal layer having an upper surface substantially coplanar with an upper surface of the first thin film layer, the second side comprising a second metal layer of the plurality of metal layers and a second thin film layer of the plurality of thin film layers, the second metal layer having a lower surface substantially coplanar with a lower surface of the second thin film layer, the interconnecting structure being free from active and passive devices;

a die comprising an active surface and a backside surface opposite the active surface, the active surface being directly coupled to the first side of the interconnecting structure; and

a first connector directly coupled to the second side of the interconnecting structure, the second side being opposite the first side.

18. The semiconductor device of claim 17, wherein the interconnecting structure is free from through substrate vias.

19. The semiconductor device of claim 17 further comprising a first substrate directly coupled to the first connector, the first connector comprising a solder ball, a metal pillar, a micro bump, or a controlled collapse chip connection bump.

20. The semiconductor device of claim 17 further comprising:

a second connector directly coupled to the first side of the interconnecting structure;

a third connector directly coupled to the active surface of the die, the second connector and the third connector directly coupled together; and

an underfill surrounding the second and third connectors, the underfill being between the active surface of the die and the first side of the interconnecting structure.

21. The semiconductor device of claim 17, wherein each of the plurality of thin film layers comprises an etch stop layer and an inter-metal dielectric (IMD).

22. The semiconductor device of claim 21, wherein each of the plurality of metal layers have substantially a same top surface area and comprises a metal line and a metal via, each of the metal lines being disposed in an IMD and each of the metal vias being disposed in an etch stop layer and an IMD.