Altering capacitance of MIM capacitor having reactive layer therein

• US 9,299,765 B2
• Filed: 04/15/2015
• Issued: 03/29/2016
• Est. Priority Date: 08/18/2010
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Edelstein, Daniel C., Stamper, Anthony K.
• Primary Examiner(s): Ha, Nguyen T
• Application Number:
  US14/687,049
• Publication Number:
  US 20150221717A1
• Time in Patent Office: 349 Days
• Field of Search: 361303-305, 361/301.2, 361/301.4, 361/321.2, 438/240, 438/241, 438/253, 438/395, 438/396
• US Class Current: 1/1
• CPC Class Codes: H01G 7/026 with ceramic dielectric
• CPC Class Codes: H01G 7/04 having a dielectric selected for the variation of its permittivity with applied temperature
• CPC Class Codes: H01G 7/06 having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors electrets H01G7/02
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 28/75 comprising two or more layers, e.g. comprising a barrier layer and a metal layer

Abstract

Embodiments include a metal-insulator-metal (MIM) capacitor having: a first electrode; a second electrode disposed proximate the first electrode; an insulator layer between the first and second electrodes; and a reactive layer positioned proximate the insulator layer and configured to allow altering of the reactive layer to change a capacitive value of the MIM capacitor, the reactive layer including a reactive conductor.

Claims

1. A metal-insulator-metal (MIM) capacitor comprising:

a first electrode;

a second electrode disposed proximate the first electrode;

an insulator layer between the first and second electrodes; and

a reactive layer positioned proximate the insulator layer between the first and second electrodes and configured to allow altering of the reactive layer to change a capacitive value of the MIM capacitor, the reactive layer including a reactive conductor wherein the reactive layer includes silicon dioxide (SiO₂) in contact with the reactive conductor.

2. The MIM capacitor of claim 1, wherein the reactive layer is positioned between the insulator layer and the first electrode.

3. The MIM capacitor of claim 1, wherein the reactive layer is positioned between the insulator layer and the second electrode.

4. The MIM capacitor of claim 1, wherein the reactive conductor is selected from the group comprising:

aluminum (Al), titanium (Ti) and tantalum (Ta).

5. A metal-insulator-metal (MIM) capacitor comprising:

a first electrode;

a second electrode disposed proximate the first electrode;

an insulator layer between the first and second electrodes; and

a reactive layer positioned proximate the insulator layer between the first and second electrodes and configured to allow altering of the first reactive layer to change a capacitive value of the MIM capacitor, the reactive layer including a conductor material of one of;

the first electrode and the second electrode wherein the reactive layer includes silicon dioxide (SiO₂) in contact with the reactive conductor.

6. The MIM capacitor of claim 5, wherein the reactive layer includes a portion of the first electrode that is contact with the insulator layer.

7. The MIM capacitor of claim 5, wherein the reactive layer includes a portion of the second electrode that is contact with the insulator layer.

8. The MIM capacitor of claim 5, wherein the reactive layer is selected from the group comprising:

aluminum (Al), silicon (Si), titanium (Ti) and tantalum (Ta).