Semiconductor substrate and method of fabricating the same

• US 9,299,779 B2
• Filed: 07/08/2011
• Issued: 03/29/2016
• Est. Priority Date: 04/28/2011
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Sakai, Shiro
• Primary Examiner(s): Lu, Jiong-Ping
• Application Number:
  US14/114,124
• Publication Number:
  US 20140042493A1
• Time in Patent Office: 1,726 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/0243 Surface structure
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/02647 Lateral overgrowth
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 29/0688 characterised by the particular shape of a junction between semiconductor regions
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

Disclosed are a flat and thin semiconductor substrate, which is formed on a heterogeneous substrate to be easily lifted-off from the heterogeneous substrate, a semiconductor device including the same, and a method of fabricating the same. The semiconductor substrate includes a substrate having a plurality of semispherical protrusions arranged at a predetermined interval on a first plane, and a first semiconductor layer formed on the first plane of the substrate.

Claims

1. A method of fabricating a semiconductor substrate, the

method comprising:

forming a plurality of semispherical protrusions at an interval on a first plane of a substrate;

forming a first semiconductor layer on the first plane of the substrate;

forming a metallic material layer comprising a pattern of shapes on a first surface of the first semiconductor layer opposite to the first plane of the substrate; and

forming a second semiconductor layer on the first surface of the first semiconductor layer using metal organic chemical vapor deposition to form cavities in portions of the first semiconductor layer adjoining the metallic material layer.

2. The method of claim 1, wherein forming the plurality of semispherical protrusions comprises etching the first plane of the substrate.

3. The method of claim 2, wherein the semispherical protrusions are formed on the first plane of the substrate such that the ratio of the total surface area of the plurality of semispherical protrusions to the surface area of the first plane is at least 1.

4. The method of claim 3, wherein the semispherical protrusions are formed to have a bottom surface width of 5 μ

m or less.

5. The method of claim 4, wherein the first semiconductor layer is formed by metal organic chemical vapor deposition.

6. The method of claim 5, wherein the substrate comprises sapphire and the first semiconductor layer comprises gallium nitride.

7. The method of claim 1, further comprising lifting-off the first semiconductor layer from the substrate.

8. The method of claim 7, wherein the first semiconductor layer is lifted-off from the substrate using a laser lift-off process.

9. The method of claim 7, wherein the first semiconductor layer is lifted-off from the substrate using a mechanical lift-off process.

10. The method of claim 1, wherein the metallic material layer is selected from the group consisting of tantalum, titanium, and chromium.

11. The method of claim 10, wherein each shape in the metallic material layer is formed to have a width equal to the interval between the semispherical protrusions at positions on the first surface of the first semiconductor layer between the semispherical protrusions.

12. The method of claim 10, wherein the pattern of shapes comprises a plurality of rectangles each having a long side disposed in a first direction, and the pattern of shapes are spaced apart from each other in a second direction orthogonal to the first direction.

13. The method of claim 12, wherein the first direction is a {1-100} direction of the first semiconductor layer or an equivalent direction to the {1-100} direction.

14. The method of claim 1, further comprising:

lifting-off the substrate using the cavities formed in the first semiconductor layer to fabricate a semiconductor substrate comprising the first semiconductor layer and the second semiconductor layer.

15. The method of claim 1, further comprising:

lifting-off the substrate from the first semiconductor layer;

forming a first compound semiconductor layer on the first semiconductor layer;

forming an active layer on the first compound semiconductor layer; and

forming a second compound semiconductor layer on the active layer.