Trench connection between a transistor and a further component

• US 9,299,834 B2
• Filed: 07/01/2013
• Issued: 03/29/2016
• Est. Priority Date: 03/07/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Zundel, Markus, Hirler, Franz, Krischke, Norbert
• Primary Examiner(s): Nguyen, Thanh T
• Application Number:
  US13/933,047
• Publication Number:
  US 20140048871A1
• Time in Patent Office: 1,002 Days
• Field of Search: 257327-334, 257/288, 257/302
• US Class Current: 1/1
• CPC Class Codes: H01L 21/743 Making of internal connections, substrate contacts
• CPC Class Codes: H01L 27/0733 in combination with capacitors only
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7804 the other device being a pn-junction diode
• CPC Class Codes: H01L 29/7809 having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7816 Lateral DMOS transistors, i.e. LDMOS transistors
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence
• CPC Class Codes: H01L 29/945 Trench capacitors

Abstract

A semiconductor component arrangement includes a semiconductor body, a transistor structure, a further component, and at least a first electrode structure. The semiconductor body has a first side and a second side. The transistor structure is integrated in the semiconductor body, and includes a source and a drain. The further component is also integrated in the semiconductor body. The first electrode structure is disposed in at least a first trench, and includes at least one electrode. The first electrode structure electrically connects at least one of the source and the drain to the further component.

Claims

1. A semiconductor component arrangement, comprising:

a semiconductor body have a first side and a second side;

a trench transistor structure integrated in the semiconductor body, wherein the trench transistor structure has a cell structure comprising a multiplicity of identically constructed transistor cells each having a gate electrode arranged in a transistor trench, wherein each of the transistor cells has a source region and a body region with the body region being doped complementarily to the source region, wherein the source regions of the transistor cells are connected to a common source electrode, and wherein the transistor cells have a common drain zone;

a further component integrated in the semiconductor body;

at least a first electrode structure disposed in at least a first trench, the first electrode structure comprising at least one electrode, the first electrode structure electrically connecting at least one of the source regions and the common drain zone to the further component.

2. The semiconductor component arrangement of claim 1, further comprising a vertical terminal connection electrically connecting the first electrode structure to the at least one of the source regions and the common drain zone.

3. The semiconductor component arrangement of claim 2, wherein the at least one of the source regions and the common drain zone comprises the source.

4. The semiconductor component arrangement of claim 1, wherein the trench transistor structure further comprises a drift zone, and an insulating layer disposed between the at least one electrode and the drift zone.

5. The semiconductor component arrangement of claim 4, wherein the insulating layer is further disposed between the at least one electrode and the body regions.

6. The semiconductor component arrangement of claim 1, wherein the source regions and the body regions of the individual transistor cells are connected to a common source electrode.

7. The semiconductor component arrangement of claim 1, wherein the further component is a temperature sensor.

8. The semiconductor component arrangement of claim 1, wherein the further component is substantially surrounded by the multiplicity of identically constructed transistor cells in a lateral direction of the semiconductor body.

9. The semiconductor component arrangement of claim 8 wherein the further component is a temperature sensor.

10. The semiconductor component arrangement of claim 9 wherein the temperature sensor comprises a pn junction including an n-type zone and a p-type zone, wherein a first trench connection line in the semiconductor body makes contact with the n-type zone and a second trench connection line in the semiconductor body makes contact with the p-type zone.

11. The semiconductor component arrangement of claim 1, wherein the trench transistor structure further comprises a drift zone, and an insulating layer disposed between the at least one electrode and the drift zone.

12. A semiconductor component arrangement, comprising:

a semiconductor body have a first side and a second side;

a trench transistor structure integrated in the semiconductor body, wherein the trench transistor structure has a cell structure comprising a multiplicity of identically constructed transistor cells each having a gate electrode arranged in a transistor trench, wherein each of the transistor cells has a source region and a body region with the body region being doped complementarily to the source region, wherein the source regions and the body regions of the transistor cells are connected to a common source electrode, and wherein the transistor cells have a common drain zone;

a temperature sensor integrated in the semiconductor body; and

at least a first electrode structure disposed in at least a first trench, the first electrode structure comprising at least one electrode, the first electrode structure electrically connecting at least one of the source regions and the common drain zone to the temperature sensor.

13. The semiconductor component arrangement of claim 12, further comprising a vertical terminal connection electrically connecting the first electrode structure to the at least one of the source regions and the common drain zone.

14. The semiconductor component arrangement of claim 13, wherein the at least one of the source regions and the common drain zone comprises the source.

15. The semiconductor component arrangement of claim 12, wherein the trench transistor structure further comprises a drift zone, and an insulating layer disposed between the at least one electrode and the drift zone.

16. The semiconductor component arrangement of claim 15, wherein the insulating layer is further disposed between the at least one electrode and the body regions.

17. The semiconductor component arrangement of claim 12, wherein the temperature sensor is substantially surrounded by the multiplicity of identically constructed transistor cells in a lateral direction of the semiconductor body.

18. The semiconductor component arrangement of claim 12 wherein the temperature sensor comprises a pn junction including an n-type zone and a p-type zone, wherein a first trench connection line in the semiconductor body makes contact with the n-type zone and a second trench connection line in the semiconductor body makes contact with the p-type zone.

19. A semiconductor component arrangement, comprising:

a semiconductor body have a first side and a second side;

a trench transistor structure integrated in the semiconductor body, wherein the trench transistor structure has a cell structure comprising a multiplicity of identically constructed transistor cells each having a gate electrode arranged in a transistor trench, wherein each of the transistor cells has a source region and a body region with the body region being doped complementarily to the source region, wherein the source regions of the transistor cells are connected to a common source electrode, and wherein the transistor cells have a common drain zone;

a temperature sensor integrated in the semiconductor body, wherein the temperature sensor is substantially surrounded by the multiplicity of identically constructed transistor cells in the semiconductor body; and

at least a first electrode structure disposed in at least a first trench, the first electrode structure comprising at least one electrode, the first electrode structure electrically connecting at least one of the source regions and the common drain zone to the temperature sensor.

20. The semiconductor component arrangement of claim 19, further comprising a vertical terminal connection electrically connecting the first electrode structure to the at least one of the source regions and the common drain zone.