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Light emitting devices having light coupling layers

  • US 9,299,881 B2
  • Filed: 02/23/2015
  • Issued: 03/29/2016
  • Est. Priority Date: 09/29/2011
  • Status: Active Grant
First Claim
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1. A method for forming a light emitting device, comprising:

  • (a) forming an aluminum-containing Group III-V semiconductor layer on a first substrate;

    (b) forming a u-type gallium nitride layer on the aluminum-containing Group III-V semiconductor layer;

    (c) forming an n-type Group III-V semiconductor layer on the u-type gallium nitride layer;

    (d) forming an active layer on the n-type Group III-V semiconductor layer;

    (e) forming a p-type Group III-V semiconductor layer on the active layer;

    (f) providing a second substrate on the p-type Group III-V semiconductor layer;

    (g) removing the first substrate to expose the aluminum-containing Group III-V semiconductor layer;

    (h) roughening the aluminum-containing Group III-V semiconductor layer and the u-type gallium nitride layer to form a light coupling structure including the aluminum-containing Group III-V semiconductor layer and the u-type gallium nitride layer; and

    (i) providing an electrode on a top surface of the roughened surface of the light coupling structure so that the electrode contacts the aluminum-containing Group III-V semiconductor layer and the u-type gallium nitride layer.

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