Method for growing germanium epitaxial films
First Claim
1. A method for growing germanium epitaxial films, said method comprising:
- flowing germane gas over a silicon substrate at a first temperature to form an intrinsic germanium seed layer on said silicon substrate;
increasing said first temperature of said silicon substrate to a second temperature;
flowing a mixture of diborane gas and germane gas over said intrinsic germanium seed layer to produce a doped germanium seed layer; and
growing a bulk germanium film layer on top of said doped germanium layer.
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Abstract
A method for growing germanium epitaxial films is disclosed. Initially, a silicon substrate is preconditioned with hydrogen gas. The temperature of the preconditioned silicon substrate is then decreased, and germane gas is flowed over the preconditioned silicon substrate to form an intrinsic germanium seed layer. Next, a mixture of germane and phosphine gases can be flowed over the intrinsic germanium seed layer to produce an n-doped germanium seed layer. Otherwise, a mixture of diborane and germane gases can be flowed over the intrinsic germanium seed layer to produce a p-doped germanium seed layer. At this point, a bulk germanium layer can be grown on top of the doped germanium seed layer.
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Citations
10 Claims
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1. A method for growing germanium epitaxial films, said method comprising:
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flowing germane gas over a silicon substrate at a first temperature to form an intrinsic germanium seed layer on said silicon substrate; increasing said first temperature of said silicon substrate to a second temperature; flowing a mixture of diborane gas and germane gas over said intrinsic germanium seed layer to produce a doped germanium seed layer; and growing a bulk germanium film layer on top of said doped germanium layer. - View Dependent Claims (2, 3, 4, 6, 7, 8, 9)
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5. A method for growing germanium epitaxial films, said method comprising:
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flowing germane gas over a silicon substrate at a first temperature to form an intrinsic germanium seed layer on said silicon substrate; increasing said first temperature of said silicon substrate to a second temperature; flowing a mixture of dopant gas and germane gas over said intrinsic germanium seed layer to produce a doped germanium seed layer, wherein said dopant gas contains phosphine; and growing a bulk germanium film layer on top of said doped germanium layer.
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10. A method for growing germanium epitaxial films, said method comprising:
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flowing germane gas over a silicon substrate at a first temperature to form an intrinsic germanium seed layer on said silicon substrate; increasing said first temperature of said silicon substrate to a second temperature; flowing a mixture of dopant gas and germane gas over said intrinsic germanium seed layer to produce a doped germanium seed layer, wherein said flowing a mixture of said gases further includes flowing a mixture of said gases over said intrinsic germanium seed layer to produce said doped germanium seed layer capable of reducing crystalline defects in said intrinsic germanium seed layer via lattice mismatch reduction; and growing a bulk germanium film layer on top of said doped germanium layer.
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Specification