Methods for atomic layer etching
First Claim
Patent Images
1. A method of processing a substrate having a surface, the method comprising:
- laterally moving a surface beneath a gas distribution plate comprising a plurality of elongate gas ports including a first gas outlet to deliver a first reactive gas and second gas outlet to deliver a second reactive gas different from the first reactive gas, the second reactive gas comprising a plasma;
forming an etch layer on the substrate surface comprising sequentially exposing the substrate surface to the first reactive gas and the second reactive gas;
changing a temperature of the substrate surface from a first temperature to a second temperature, the second temperature being sufficient to vaporize the etch layer; and
locally removing the vaporized etch layer from the surface,wherein at least a portion of the surface is being exposed to the first reactive gas or second reactive gas while the local temperature of a different portion of the surface already exposed to the second reactive gas is being changed.
1 Assignment
0 Petitions
Accused Products
Abstract
Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element and remote plasma are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.
-
Citations
20 Claims
-
1. A method of processing a substrate having a surface, the method comprising:
-
laterally moving a surface beneath a gas distribution plate comprising a plurality of elongate gas ports including a first gas outlet to deliver a first reactive gas and second gas outlet to deliver a second reactive gas different from the first reactive gas, the second reactive gas comprising a plasma; forming an etch layer on the substrate surface comprising sequentially exposing the substrate surface to the first reactive gas and the second reactive gas; changing a temperature of the substrate surface from a first temperature to a second temperature, the second temperature being sufficient to vaporize the etch layer; and locally removing the vaporized etch layer from the surface, wherein at least a portion of the surface is being exposed to the first reactive gas or second reactive gas while the local temperature of a different portion of the surface already exposed to the second reactive gas is being changed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A method of processing a substrate comprising:
-
laterally moving a substrate having a surface beneath a gas distribution plate comprising a plurality of elongate gas ports including a first gas outlet to deliver a first reactive gas and second gas outlet to deliver a second reactive gas; delivering the first reactive gas to at least a portion of the substrate surface to form a first reactive layer on the substrate surface; locally removing unreacted first reactive gas; generating a plasma of a second reactive gas; delivering the second reactive gas comprising the plasma to at least a portion of the substrate surface having a first reactive layer to react with the first reactive layer to form an etch layer on the substrate surface; locally removing unreacted second reactive gas; locally changing the temperature of the substrate surface from a first temperature to a second temperature, the second temperature being sufficient to vaporize the etch layer; and removing the vaporized etch layer. - View Dependent Claims (15, 16, 17, 18, 19)
-
-
20. A method of processing a substrate having a surface, the method comprising:
-
laterally moving a surface beneath a gas distribution plate comprising a plurality of elongate gas ports including a first gas outlet to deliver a first reactive gas and second gas outlet to deliver a second reactive gas different from the first reactive gas, the second reactive gas comprising a remote plasma; forming an etch layer on the substrate surface comprising sequentially exposing the substrate surface to the first reactive gas and the second reactive gas comprising a plasma; changing a temperature of the substrate surface from a first temperature below an isotropic etch point of the etch layer to a second temperature above the isotropic etch point of the etch layer; and locally removing the vaporized etch layer from the surface, wherein at least a portion of the surface is being exposed to the first reactive gas or second reactive gas while the local temperature of a different portion of the surface already exposed to the second reactive gas is being changed.
-
Specification