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Methods for atomic layer etching

  • US 9,305,805 B2
  • Filed: 01/21/2015
  • Issued: 04/05/2016
  • Est. Priority Date: 11/30/2011
  • Status: Active Grant
First Claim
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1. A method of processing a substrate having a surface, the method comprising:

  • laterally moving a surface beneath a gas distribution plate comprising a plurality of elongate gas ports including a first gas outlet to deliver a first reactive gas and second gas outlet to deliver a second reactive gas different from the first reactive gas, the second reactive gas comprising a plasma;

    forming an etch layer on the substrate surface comprising sequentially exposing the substrate surface to the first reactive gas and the second reactive gas;

    changing a temperature of the substrate surface from a first temperature to a second temperature, the second temperature being sufficient to vaporize the etch layer; and

    locally removing the vaporized etch layer from the surface,wherein at least a portion of the surface is being exposed to the first reactive gas or second reactive gas while the local temperature of a different portion of the surface already exposed to the second reactive gas is being changed.

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