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Uniformly doped leakage current stopper to counter under channel leakage currents in bulk FinFET devices

  • US 9,306,001 B1
  • Filed: 04/14/2015
  • Issued: 04/05/2016
  • Est. Priority Date: 04/14/2015
  • Status: Expired due to Fees
First Claim
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1. A method of forming a leakage current stopper region of a fin-type field effect transistor (FinFET), the method comprising:

  • forming at least one fin having an active region and a non-active region;

    forming a channel region in the active region of the at least one fin;

    exposing a surface of the non-active region of the at least one fin, the exposed surface leading to a portion of the non-active region that is substantially underneath the channel region; and

    implanting dopants through the exposed surface of the non-active region of the at least one fin to form the leakage current stopper region.

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