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Semiconductor device having dual work function gate structure and electronic device having the same

  • US 9,306,022 B1
  • Filed: 06/15/2015
  • Issued: 04/05/2016
  • Est. Priority Date: 12/16/2014
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a body including a first junction region;

    a pillar positioned over the body and including a vertical channel region and a second junction region over the vertical channel region;

    a gate trench exposing side surfaces of the pillar;

    a gate dielectric layer provided in the gate trench and over a side surface of the pillar; and

    a gate electrode provided in the gate trench, wherein the gate dielectric layer is interposed between the gate electrode and the gate trench,wherein the gate electrode comprising;

    a first work function liner over the vertical channel region and including an aluminum-containing metal nitride;

    a second work function liner over the second junction region and including a silicon-containing non-metal material; and

    an air gap positioned between the second work function liner and the second junction region.

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