Semiconductor device and method of manufacturing the same
First Claim
Patent Images
1. A semiconductor device comprising:
- a semiconductor layer formed on a substrate, the semiconductor layer including an electron transit layer on the substrate, an electron supply layer on the electron transit layer, and a cap layer on the electron supply layer;
an electrode contact window that includes a recess formed on a surface of the electron supply layer and the cap layer, an inner wall of the recess having a slanted slope, wherein a bottom of the recess is formed at the surface of the electron supply layer; and
a source electrode, a drain electrode, and a gate electrode formed on the semiconductor layer,wherein the drain electrode is in contact with the bottom and the slanted slope of the inner wall.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device includes a semiconductor layer formed on a substrate, an electrode contact window that includes a recess formed on a surface of the semiconductor layer, an inner wall having a slope, and a source electrode, a drain electrode, and a gate electrode formed on the semiconductor layer, in which the drain electrode is in contact with the slope of the inner wall.
6 Citations
10 Claims
-
1. A semiconductor device comprising:
-
a semiconductor layer formed on a substrate, the semiconductor layer including an electron transit layer on the substrate, an electron supply layer on the electron transit layer, and a cap layer on the electron supply layer; an electrode contact window that includes a recess formed on a surface of the electron supply layer and the cap layer, an inner wall of the recess having a slanted slope, wherein a bottom of the recess is formed at the surface of the electron supply layer; and a source electrode, a drain electrode, and a gate electrode formed on the semiconductor layer, wherein the drain electrode is in contact with the bottom and the slanted slope of the inner wall. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
Specification