Semiconductor device with trench-like feed-throughs
First Claim
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1. A semiconductor device comprising:
- an electrically conductive substrate layer;
a drain contact, wherein said substrate layer is separated from said drain contact by an intervening layer;
a plurality of gate trenches that extend into but not completely through said intervening layer, each of said gate trenches filled with a first filler material;
a plurality of source contact trenches that extend into but not completely through said intervening layer, each of said source contact trenches filled with a second filler material different from said first filler material, wherein said source contact trenches are interleaved between said gate trenches; and
a plurality of feed-through trenches that extend completely through said intervening layer to said substrate layer, each of said feed-through trenches filled with said second filler material and coupled to said drain contact, wherein said feed-through trenches are adjacent to each other under said drain contact and are not interleaved with said gate trenches and are not interleaved with said source contact trenches.
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Abstract
A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.
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Citations
21 Claims
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1. A semiconductor device comprising:
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an electrically conductive substrate layer; a drain contact, wherein said substrate layer is separated from said drain contact by an intervening layer; a plurality of gate trenches that extend into but not completely through said intervening layer, each of said gate trenches filled with a first filler material; a plurality of source contact trenches that extend into but not completely through said intervening layer, each of said source contact trenches filled with a second filler material different from said first filler material, wherein said source contact trenches are interleaved between said gate trenches; and a plurality of feed-through trenches that extend completely through said intervening layer to said substrate layer, each of said feed-through trenches filled with said second filler material and coupled to said drain contact, wherein said feed-through trenches are adjacent to each other under said drain contact and are not interleaved with said gate trenches and are not interleaved with said source contact trenches. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A flip chip semiconductor device comprising:
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a plurality of solder balls comprising a solder ball coupled to a drain contact on a first surface of said device; a first metal layer on a second surface of said device, said second surface opposite said first surface; a substrate layer adjacent said first metal layer, wherein said substrate layer is separated from said drain contact by an intervening layer; a plurality of gate trenches that extend into but not completely through said intervening layer, each of said gate trenches filled with a first filler material; a plurality of source contact trenches that extend into but not completely through said intervening layer, each of said source contact trenches filled with a second filler material different from said first filler material, wherein said source contact trenches are interleaved between said gate trenches, and wherein said source contact trenches are in contact with a second metal layer but said gate trenches are isolated from said second metal layer; and a plurality of feed-through trenches that extend completely through said intervening layer to said substrate layer, each of said feed-through trenches with said second filler material and coupled to said drain contact, wherein said feed-through trenches pass through said intervening layer and into said substrate layer, wherein said feed-through trenches are adjacent to each other under said drain contact and are not interleaved with said gate trenches and are not interleaved with said source contact trenches, and further wherein in operation said device comprises a circuit from a source contact through said intervening layer, said substrate layer, and said feed-through trenches to said drain contact. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A method of fabricating a flip chip, said method comprising:
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forming a plurality of gate trenches in a surface of an epitaxial layer of a structure, said gate trenches extending partially into but not completely through said epitaxial layer, wherein a first plurality of source contact trenches are also formed in said surface of said epitaxial layer, said source gate trenches extending partially into but not completely through said epitaxial layer, said source contact trenches interleaved between said gate trenches; forming a plurality of feed-through trenches in said surface, said feed-through trenches extending completely through said epitaxial layer and into a substrate layer adjoining a second surface of said epitaxial layer; and depositing a first filler material into said source contact trenches and depositing a second filler material into both said gate trenches and said feed-through trenches, said second filler material different from said first filler material, wherein said gate trenches are subsequently electrically coupled to a first solder ball used as a source contact, wherein said feed-through trenches are adjacent to each other under a drain contact and are not interleaved with said gate trenches and are not interleaved with said source contact trenches, and wherein said feed-through trenches are subsequently electrically coupled to a second solder ball used as a drain contact. - View Dependent Claims (17, 18, 19, 20, 21)
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Specification