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Semiconductor device with trench-like feed-throughs

  • US 9,306,056 B2
  • Filed: 10/30/2009
  • Issued: 04/05/2016
  • Est. Priority Date: 10/30/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an electrically conductive substrate layer;

    a drain contact, wherein said substrate layer is separated from said drain contact by an intervening layer;

    a plurality of gate trenches that extend into but not completely through said intervening layer, each of said gate trenches filled with a first filler material;

    a plurality of source contact trenches that extend into but not completely through said intervening layer, each of said source contact trenches filled with a second filler material different from said first filler material, wherein said source contact trenches are interleaved between said gate trenches; and

    a plurality of feed-through trenches that extend completely through said intervening layer to said substrate layer, each of said feed-through trenches filled with said second filler material and coupled to said drain contact, wherein said feed-through trenches are adjacent to each other under said drain contact and are not interleaved with said gate trenches and are not interleaved with said source contact trenches.

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