Semiconductor device and method of fabricating the same
First Claim
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1. A semiconductor device comprising:
- active fins protruding from an active layer and extending in a first direction;
a gate structure on the active fins extending in a second direction intersecting the first direction; and
a spacer on at least one side of the gate structure,wherein each of the active fins comprises a first region and a second region adjacent to the first region in the first direction, and a width of the first region in the second direction is different from a width of the second region in the second direction; and
wherein the first region is asymmetrical with respect to a centerline in the first direction of each of the active fins.
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Abstract
A semiconductor device includes: active fins protruding from an active layer and extending in a first direction; a gate structure on the active fins extending in a second direction intersecting the first direction; and a spacer on at least one side of the gate structure, wherein each of the active fins includes a first region and a second region adjacent to the first direction in the first direction, and a width of the first region in the second direction is different from a width of the second region in the second direction.
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Citations
19 Claims
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1. A semiconductor device comprising:
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active fins protruding from an active layer and extending in a first direction; a gate structure on the active fins extending in a second direction intersecting the first direction; and a spacer on at least one side of the gate structure, wherein each of the active fins comprises a first region and a second region adjacent to the first region in the first direction, and a width of the first region in the second direction is different from a width of the second region in the second direction; and wherein the first region is asymmetrical with respect to a centerline in the first direction of each of the active fins. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device comprising:
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a first transistor; and a second transistor spaced apart from the first transistor in a first direction, wherein the first transistor comprises a first active fin which extends in the first direction, and the second transistor comprises a second active fin which is aligned with the first active fin in the first direction, wherein a width of the first active fin in a second direction intersecting the first direction is different from a width of the second active fin in the second direction; and wherein the first active fin is asymmetrical with respect to a centerline in the first direction through the second active fin. - View Dependent Claims (13, 14, 15)
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16. A semiconductor device comprising:
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a plurality of active fins extending in a first direction; a gate structure extending in a second direction on a portion of each of the plurality of active fins; and a spacer on at least one side of the gate structure, wherein each of the plurality of active fins comprises a first region and a second region, wherein the first region of each of the plurality of active fins comprises a first width in the second direction and the second region of each of the plurality of active fins comprises a second width in the second direction, wherein the first width is smaller than the second width, and wherein the first region is asymmetrical with respect to a centerline in the first direction of each of the active fins. - View Dependent Claims (17, 18, 19)
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Specification