Organic light-emitting display device including a flexible TFT substrate and stacked barrier layers

• US 9,306,071 B2
• Filed: 01/22/2014
• Issued: 04/05/2016
• Est. Priority Date: 01/30/2013
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Lee, Jae-Seob, Jin, Dong-Un
• Primary Examiner(s): Armand, Marc
• Assistant Examiner(s): SYLVIA, CHRISTINA A
• Application Number:
  US14/161,474
• Publication Number:
  US 20140209877A1
• Time in Patent Office: 804 Days
• Field of Search: 257/40, 257/340, 257/347
• US Class Current: 1/1
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H10K 77/111 Flexible substrates

Abstract

A thin-film transistor (TFT) substrate includes a flexible substrate. A first barrier layer is formed on the flexible substrate. The first barrier layer includes a first silicon oxide layer and a first silicon nitride layer. A second barrier layer is formed on the first barrier layer. The second barrier layer includes a second silicon oxide layer and a second silicon nitride layer. A TFT layer is formed on the second barrier layer. The second silicon oxide layer is disposed adjacent to the TFT layer.

Claims

1. A thin-film transistor (TFT) substrate, comprising:

a flexible substrate;

a first barrier layer formed on the flexible substrate, the first barrier layer comprising a first silicon oxide layer and a first silicon nitride layer;

a second barrier layer formed on the first barrier layer, the second barrier layer comprising a second silicon oxide layer and a second silicon nitride layer;

a silicon oxynitride layer interposed between the first silicon nitride layer and the second silicon nitride layer; and

a TFT layer formed on the second barrier layer,

wherein the second silicon oxide layer is disposed closer to the TFT layer than the first silicon oxide layer, wherein the first silicon nitride layer and the second silicon nitride layer are interposed between the first silicon oxide layer and the second silicon oxide layer,

wherein the first silicon nitride layer is in contact with the second silicon nitride layer, and

wherein a total thickness of the first and second silicon nitride layers is less than a total thickness of the first and second silicon oxide layers.

2. The TFT substrate of claim 1, wherein the first silicon oxide layer is in contact with the flexible substrate, and the first silicon nitride layer of the first barrier layer is in contact with the first silicon oxide layer.

3. The TFT substrate of claim 1, further comprising a silicon nitride layer interposed between the flexible substrate and the first silicon oxide layer.

4. The TFT substrate of claim 3, further comprising a silicon oxynitride layer between the first silicon nitride layer and the second silicon nitride layer.

5. The TFT substrate of claim 3, wherein the silicon oxide layer is in contact with the flexible substrate, and the silicon nitride layer is in contact with the silicon oxide layer.

6. The TFT substrate of claim 5, further comprising a silicon oxynitride layer between the first silicon nitride layer and the second silicon nitride layer.

7. The TFT substrate of claim 1, wherein each of the first and second barrier layers further includes one or more silicon oxide layers and one or more silicon nitride layers.

8. An organic light-emitting display device, comprising:

a flexible substrate;

a first barrier layer formed on the flexible substrate, the first barrier layer comprising a first silicon oxide layer and a first silicon nitride layer;

a second barrier layer formed on the first barrier layer, the second barrier layer comprising a second silicon oxide layer and a second silicon nitride layer;

a silicon oxynitride layer interposed between the first silicon nitride layer and the second silicon nitride layer;

a thin-film transistor (TFT) formed on the second barrier layer; and

an organic light-emitting layer formed on the second barrier layer, the organic light-emitting layer connected to the TFT,

wherein the first silicon nitride layer is in contact with the second silicon nitride layer, and

wherein the first silicon oxide layer of the first barrier layer is disposed on the flexible substrate, and the first silicon nitride layer of the first barrier layer is disposed on the first silicon oxide layer of the first barrier layer, and wherein the second silicon nitride layer of the second barrier layer is in contact with the first barrier layer, and the second silicon oxide layer of the second barrier layer is disposed on the second silicon nitride layer of the second barrier layer.

9. The organic light-emitting display device of claim 8, further comprising a silicon oxynitride layer between the first silicon nitride layer and the second silicon nitride layer.

10. The organic light-emitting display device of claim 8, further comprising a silicon nitride layer disposed between the flexible substrate and the first silicon oxide layer.