Semiconductor device and method for manufacturing the same
First Claim
1. A semiconductor device comprising:
- an insulating film;
an oxide semiconductor film on the insulating film, the oxide semiconductor film comprising;
a first region;
a pair of second regions, the first region located between the pair of second regions; and
a pair of third regions, the first region and the pair of second regions located between the pair of third regions;
a gate insulating film over the oxide semiconductor film; and
a first electrode over the gate insulating film and overlapping with the first region,wherein the first region is a c-axis aligned crystalline oxide semiconductor region,wherein each of a crystallinity of the pair of second regions and a crystallinity of the pair of third regions is lower than a crystallinity of the first region,wherein a dopant concentration of the pair of third regions is higher than a dopant concentration of the pair of second regions,wherein an energy level of a bottom of the conductive band of the first region is higher than an energy level of a bottom of a conductive band of the pair of second regions, andwherein the energy level of the bottom of the conductive band of the pair of second regions is higher than an energy level of a bottom of a conductive band of the pair of third regions.
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Abstract
A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device includes an oxide semiconductor film including a first region, a pair of second regions in contact with side surfaces of the first region, and a pair of third regions in contact with side surfaces of the pair of second regions; a gate insulating film provided over the oxide semiconductor film; and a first electrode that is over the gate insulating film and overlaps with the first region. The first region is a CAAC oxide semiconductor region. The pair of second regions and the pair of third regions are each an amorphous oxide semiconductor region containing a dopant. The dopant concentration of the pair of third regions is higher than the dopant concentration of the pair of second regions.
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Citations
17 Claims
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1. A semiconductor device comprising:
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an insulating film; an oxide semiconductor film on the insulating film, the oxide semiconductor film comprising; a first region; a pair of second regions, the first region located between the pair of second regions; and a pair of third regions, the first region and the pair of second regions located between the pair of third regions; a gate insulating film over the oxide semiconductor film; and a first electrode over the gate insulating film and overlapping with the first region, wherein the first region is a c-axis aligned crystalline oxide semiconductor region, wherein each of a crystallinity of the pair of second regions and a crystallinity of the pair of third regions is lower than a crystallinity of the first region, wherein a dopant concentration of the pair of third regions is higher than a dopant concentration of the pair of second regions, wherein an energy level of a bottom of the conductive band of the first region is higher than an energy level of a bottom of a conductive band of the pair of second regions, and wherein the energy level of the bottom of the conductive band of the pair of second regions is higher than an energy level of a bottom of a conductive band of the pair of third regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a base insulating film; an oxide semiconductor film on an insulating surface of the base insulating film, the oxide semiconductor film including a channel formation region and a pair of impurity regions with the channel formation region therebetween, wherein the oxide semiconductor film comprises indium and zinc; a gate insulating film over the oxide semiconductor film; a gate electrode over the channel formation region of the oxide semiconductor film with the gate insulating film interposed therebetween; and first insulating films on side surfaces of the gate electrode, the first insulating films comprising silicon nitride, wherein each of the pair of impurity regions comprises a first region and a second region, the first region being located between the channel formation region and the second region, wherein the first regions of the pair of impurity regions are overlapped with the first insulating films while the second regions of the pair of impurity regions are not overlapped with the first insulating films, wherein the pair of impurity regions of the oxide semiconductor film contains nitrogen at a higher concentration than the channel formation region, wherein an energy level of a bottom of the conductive band of the channel formation region is higher than an energy level of a bottom of a conductive band of the first region, and wherein the energy level of the bottom of the conductive band of the first region is higher than an energy level of a bottom of a conductive band of the second region. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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Specification