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Semiconductor device and method for manufacturing the same

  • US 9,306,076 B2
  • Filed: 06/02/2015
  • Issued: 04/05/2016
  • Est. Priority Date: 12/28/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an insulating film;

    an oxide semiconductor film on the insulating film, the oxide semiconductor film comprising;

    a first region;

    a pair of second regions, the first region located between the pair of second regions; and

    a pair of third regions, the first region and the pair of second regions located between the pair of third regions;

    a gate insulating film over the oxide semiconductor film; and

    a first electrode over the gate insulating film and overlapping with the first region,wherein the first region is a c-axis aligned crystalline oxide semiconductor region,wherein each of a crystallinity of the pair of second regions and a crystallinity of the pair of third regions is lower than a crystallinity of the first region,wherein a dopant concentration of the pair of third regions is higher than a dopant concentration of the pair of second regions,wherein an energy level of a bottom of the conductive band of the first region is higher than an energy level of a bottom of a conductive band of the pair of second regions, andwherein the energy level of the bottom of the conductive band of the pair of second regions is higher than an energy level of a bottom of a conductive band of the pair of third regions.

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