High efficiency light emitting diode
First Claim
1. A light-emitting diode, comprising:
- a second conductivity-type semiconductor layer disposed on a support substrate;
a first conductivity-type semiconductor layer disposed on the second conductivity-type semiconductor layer;
an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;
a passivation layer disposed on the first conductivity-type semiconductor layer, the second conductivity-type semiconductor, and the active layer;
an insulating pattern layer disposed on a first region of the support substrate; and
an electrode pad disposed on the first conductivity-type semiconductor layer,wherein;
the first conductivity-type semiconductor layer comprises a plurality of recesses spaced apart from each other and a sub-micro texture disposed on an uppermost surface of the first conductivity-type semiconductor layer opposite to the support substrate excluding the plurality of recesses;
the passivation layer is disposed in the plurality of recesses and on the sub-micro texture of the first conductivity-type semiconductor layer;
the electrode pad is disposed on a portion of the sub-micro texture and at least one of the plurality of recesses of the first conductivity-type semiconductor layer.
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Accused Products
Abstract
A method of fabricating method light-emitting diode according to an exemplary embodiment of the present invention includes forming a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a first substrate, forming a second substrate on the second conductivity-type semiconductor layer, separating the first substrate from the first conductivity-type semiconductor layer, forming a mask pattern including a plurality of openings on the first conductivity-type semiconductor layer exposed after separating the substrate, etching the first conductivity-type semiconductor layer having the mask pattern disposed thereon to form a plurality of recesses separated from each other, removing the mask pattern, and etching a surface of the first conductivity-type semiconductor layer to form a sub-micro texture.
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Citations
16 Claims
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1. A light-emitting diode, comprising:
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a second conductivity-type semiconductor layer disposed on a support substrate; a first conductivity-type semiconductor layer disposed on the second conductivity-type semiconductor layer; an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a passivation layer disposed on the first conductivity-type semiconductor layer, the second conductivity-type semiconductor, and the active layer; an insulating pattern layer disposed on a first region of the support substrate; and an electrode pad disposed on the first conductivity-type semiconductor layer, wherein; the first conductivity-type semiconductor layer comprises a plurality of recesses spaced apart from each other and a sub-micro texture disposed on an uppermost surface of the first conductivity-type semiconductor layer opposite to the support substrate excluding the plurality of recesses; the passivation layer is disposed in the plurality of recesses and on the sub-micro texture of the first conductivity-type semiconductor layer; the electrode pad is disposed on a portion of the sub-micro texture and at least one of the plurality of recesses of the first conductivity-type semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A light-emitting diode, comprising:
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a second conductivity-type semiconductor layer disposed on a support substrate; a first conductivity-type semiconductor layer disposed on the second conductivity-type semiconductor layer; an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a passivation layer disposed on the first conductivity-type semiconductor layer, the second conductivity-type semiconductor, and the active layer; an insulating pattern layer disposed on a first region of the support substrate; an electrode pad disposed on the first conductivity-type semiconductor layer; and an electrode extension extending from the electrode pad, wherein; the first conductivity-type semiconductor layer comprises a plurality of recesses spaced apart from each other and a sub-micro texture disposed on an uppermost surface of the first conductivity-type semiconductor layer opposite to the support substrate excluding the plurality of recesses; the passivation layer disposed on the first conductivity-type semiconductor layer is disposed in the plurality of recesses and on the sub-micro texture of the first conductivity-type semiconductor layer; the electrode pad is disposed on a portion of the sub-micro texture and at least one of the plurality of recesses of the first conductivity-type semiconductor layer; the electrode pad is disposed on a first region of the first conductivity-type semiconductor layer arranged over the insulating pattern layer; and the electrode extension is disposed on a second region of the first conductivity-type semiconductor layer arranged over the insulating pattern layer, the second region of the first conductivity-type semiconductor layer being spaced apart from the first region of the first conductivity-type semiconductor layer.
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Specification