×

High efficiency light emitting diode

  • US 9,306,120 B2
  • Filed: 11/20/2013
  • Issued: 04/05/2016
  • Est. Priority Date: 11/21/2012
  • Status: Active Grant
First Claim
Patent Images

1. A light-emitting diode, comprising:

  • a second conductivity-type semiconductor layer disposed on a support substrate;

    a first conductivity-type semiconductor layer disposed on the second conductivity-type semiconductor layer;

    an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;

    a passivation layer disposed on the first conductivity-type semiconductor layer, the second conductivity-type semiconductor, and the active layer;

    an insulating pattern layer disposed on a first region of the support substrate; and

    an electrode pad disposed on the first conductivity-type semiconductor layer,wherein;

    the first conductivity-type semiconductor layer comprises a plurality of recesses spaced apart from each other and a sub-micro texture disposed on an uppermost surface of the first conductivity-type semiconductor layer opposite to the support substrate excluding the plurality of recesses;

    the passivation layer is disposed in the plurality of recesses and on the sub-micro texture of the first conductivity-type semiconductor layer;

    the electrode pad is disposed on a portion of the sub-micro texture and at least one of the plurality of recesses of the first conductivity-type semiconductor layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×