Light-emitting element

• US 9,306,123 B2
• Filed: 08/17/2015
• Issued: 04/05/2016
• Est. Priority Date: 12/07/2012
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Hon, Schang-Jing, Chen, Chao-Hsing, Ko, Tsun-Kai, Shen, Chien-Fu, Wang, Jia-Kuen, Chen, Hung-Che
• Primary Examiner(s): Dang, Trung Q
• Application Number:
  US14/827,872
• Publication Number:
  US 20150357524A1
• Time in Patent Office: 232 Days
• Field of Search: 257/98
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode comprising an contact area and an extension electrically connected to the first semiconductor layer, wherein the extension is connected to the contact area; a second electrode on the second semiconductor layer; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first electrode and the second electrode, wherein the extension is formed beyond a projected area of the second conductive part and not covered by the first conductive part, and the contact area is covered by the first conductive part.

Claims

1. A light-emitting element, comprising:

a light-emitting semiconductor stack comprising;

a first semiconductor layer;

a second semiconductor layer on the first semiconductor layer; and

a light-emitting layer between the first semiconductor layer and the second semiconductor layer;

a first electrode comprising an contact area and an extension electrically connected to the first semiconductor layer, wherein the extension is connected to the contact area;

a second electrode on the second semiconductor layer; and

a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first electrode and the second electrode, wherein the extension is formed beyond a projected area of the second conductive part and not covered by the first conductive part, and the contact area is covered by the first conductive part.

2. The light-emitting element according to claim 1, further comprising a reflective layer on the second electrode;

and a barrier layer on the reflective layer.

3. The light-emitting element according to claim 2, further comprising a first protection layer on the light-emitting semiconductor stack, a second protection layer comprising a first through hole on the contact area of the first electrode and a second through hole on the barrier layer.

4. The light-emitting element according to claim 3, wherein the first conductive part is formed in the first through hole and extended onto a surface of the second protection layer, and the second conductive part is formed in the second through hole and extended onto another surface of the second protection layer.

5. The light-emitting element according to claim 3, wherein the extension of the first electrode is covered by the second protection layer.

6. The light-emitting element according to claim 3, wherein part of the barrier is between the first protection layer and the second protection layer.

7. The light-emitting element according to claim 1, wherein an end of the extension is formed beyond the projected area of the second conductive part and not covered by the first conductive part.

8. The light-emitting element according to claim 1, wherein the second electrode comprises transparent conductive material.

9. The light-emitting element according to claim 2, wherein the reflective layer and the barrier layer comprises metal material.

10. The light-emitting element according to claim 2, wherein the reflective layer is formed between the barrier layer and the second electrode.

11. A light-emitting element, comprising:

a light-emitting semiconductor stack comprising;

a first semiconductor layer;

a second semiconductor layer on the first semiconductor layer; and

a light-emitting layer between the first semiconductor layer and the second semiconductor layer;

a first electrode comprising multiple contact areas and multiple extension areas, wherein the multiple contact areas are physically separated from one another; and

a first conductive part and a second conductive part are formed on the light-emitting semiconductor stack and respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the multiple extensions are formed beyond a projected area of the second conductive part and not covered by the first conductive part, and the multiple contact areas are covered by the first conductive part.

12. The light-emitting element according to claim 11, wherein the first conductive part and the second conductive part comprise a distance there between, and the distance is at least 50 μ

m.

13. The light-emitting element according to claim 11, further comprising a second electrode on the second semiconductor layer;

a reflective layer on the second electrode; and

a barrier layer on the reflective layer.

14. The light-emitting element according to claim 13, further comprising a first protection layer on the light-emitting semiconductor stack, a second protection layer comprising a first through hole on one of the multiple contact areas of the first electrode and a second through hole on the barrier layer.

15. The light-emitting element according to claim 14, wherein the first conductive part is formed in the first through hole and extended onto a top surface of the second protection layer and the second conductive part is formed in the second through hole and extended onto the top surface of the second protection layer.

16. The light-emitting element according to claim 14, wherein the multiple extensions of the first electrode are covered by the second protection layer.

17. The light-emitting element according to claim 14, wherein part of the barrier is between the first protection layer and the second protection layer.

18. The light-emitting element according to claim 11, wherein an end of each of the multiple extensions is formed beyond the projected area of the second conductive part and not covered by the first conductive part.

19. The light-emitting element according to claim 13, wherein the second electrode comprises transparent conductive material.

20. The light-emitting element according to claim 13, wherein the reflective layer and the barrier layer comprises metal material.