Field emission device and method of fabricating the same
First Claim
1. A field-emission device, comprising a solid state structure formed of a crystalline material which comprises a plurality of crystalline nanostructures and an amorphous material, wherein an outer surface of said solid state structure comprises a portion of said crystalline nanostructures and is substantially devoid of said amorphous material, and wherein a p-type conductivity of said crystalline material is higher at said outer surface which is substantially devoid of said amorphous material than far from said outer surface which is substantially devoid of said amorphous material, and wherein said portion of said crystalline nanostructures protrude outwardly from said amorphous material.
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Abstract
A field-emission device is disclosed. The device comprises a solid state structure formed of a crystalline material and an amorphous material, wherein an outer surface of the solid state structure is substantially devoid of the amorphous material, and wherein a p-type conductivity of the crystalline material is higher at or near the outer surface than far from the outer surface.
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Citations
29 Claims
- 1. A field-emission device, comprising a solid state structure formed of a crystalline material which comprises a plurality of crystalline nanostructures and an amorphous material, wherein an outer surface of said solid state structure comprises a portion of said crystalline nanostructures and is substantially devoid of said amorphous material, and wherein a p-type conductivity of said crystalline material is higher at said outer surface which is substantially devoid of said amorphous material than far from said outer surface which is substantially devoid of said amorphous material, and wherein said portion of said crystalline nanostructures protrude outwardly from said amorphous material.
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29. A method of producing current, comprising applying voltage to a solid state structure formed of a crystalline material which comprises plurality of crystalline nanostructures and an amorphous material, wherein an outer surface of said solid state structure comprises a portion of said crystalline nanostructures and is substantially devoid of said amorphous material, and wherein a p-type conductivity of said crystalline material is higher at said outer surface which is substantially devoid of said amorphous material than far from said outer surface which is substantially devoid of said amorphous material, and wherein said portion of said crystalline nanostructures protrude outwardly from said amorphous material.
Specification