Methods for programming ReRAM devices

• US 9,312,002 B2
• Filed: 04/04/2014
• Issued: 04/12/2016
• Est. Priority Date: 04/04/2014
• Status: Active Grant

• Current Assignee: SanDisk Technologies LLC (Western Digital Corporation)
• Original Assignee: Sandisk Technologies Incorporated (Western Digital Corporation)
• Inventors: Navon, Ariel, Alrod, Idan, Sharon, Eran, Ilani, Ishai, Liu, Tz-yi, Yan, Tianhong, Balakrishnan, Gopinath
• Primary Examiner(s): ALROBAIE, KHAMDAN N
• Application Number:
  US14/245,194
• Publication Number:
  US 20150287459A1
• Time in Patent Office: 739 Days
• US Class Current: 1/1
• CPC Class Codes: G11C 13/0002 using resistive RAM [RRAM] elements
• CPC Class Codes: G11C 13/0007 comprising metal oxide memory material, e.g. perovskites
• CPC Class Codes: G11C 13/0069 Writing or programming circuits or methods
• CPC Class Codes: G11C 2013/0076 Write operation performed depending on read result
• CPC Class Codes: G11C 2013/0078 Write using current through the cell
• CPC Class Codes: G11C 2013/0088 Write with the simultaneous writing of a plurality of cells
• CPC Class Codes: G11C 2213/71 Three dimensional array
• CPC Class Codes: G11C 2213/78 Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver
• CPC Class Codes: G11C 2213/79 Array wherein the access device being a transistor

Abstract

A programming technique for a set of resistance-switching memory cells such as ReRAM cell involves programming the low resistance cells to the high resistance state (in a reset process) early in a programming operation, before programming the high resistance cells to the low resistance state (in a set process), to minimize losses due to leakage currents. The reset process can be performed in one or more phases. In some cases, a current limit is imposed which limits the number of cells which can be reset at the same time. Initially, the cells which are to be reset and set are identified by comparing a logical value of their current resistance state to a logical value of write data. If there is a match, the cell is not programmed. If there is not a match, the cell is programmed.

Claims

1. A method for programming in a memory device, comprising:

for each memory cell of a set of memory cells in the memory device, determining whether the memory cell is in a high resistance state or a low resistance state, wherein each memory cell of the set of memory cells is connected to a common conductive path, each memory cell of the set of memory cells is a resistance change memory cell which is able to change its resistance to store information as a function of its resistance, the set of memory cells is arranged in array and each memory cell is subject to a programming voltage on the common conductive path;

identifying from the set of memory cells, a first subset of memory cells, the first subset of memory cells comprises memory cells which are in the low resistance state and which are to be programmed to the high resistance state based on a unit of data;

identifying from the set of memory cells, a second subset of memory cells, the second subset of memory cells comprises memory cells which are in the high resistance state and which are to be programmed to the low resistance state based on the unit of data; and

responsive to the identifying of the first subset of memory cells and the identifying of the second subset of memory cells;

programming the first subset of memory cells before the second subset of memory cells.

2. The method of claim 1, wherein:

the programming the first subset of memory cells occurs in n sequential phases, where n is a number of two or more, and a different portion of the first subset of memory cells is programmed in each of the n sequential phases.

3. The method of claim 2, wherein:

the different portions include different numbers of memory cells in the first subset of memory cells.

4. The method of claim 2, wherein:

the programming of the second subset of memory cells occurs in one phase of the where all memory cells in the second subset of memory cells are programmed concurrently.

5. The method of claim 2, wherein:

the programming of the second subset of memory cells occurs in fewer than n sequential phases.

6. The method of claim 2, further comprising:

setting n according to a current limit of the memory device so that an amount of current used in the programming of the first subset of memory cells in each of the n sequential phases does not exceed the current limit.

7. The method of claim 2, wherein:

n is set to a relatively high value when the memory device is in a power saving mode or to a relatively low value when the memory device is in a program speed optimization mode.

8. The method of claim 2, wherein:

providing a count of a number of memory cells in the first subset of memory cells, wherein n is based on the count.

9. The method of claim 1, wherein:

the programming the first subset of memory cells occurs in n sequential phases, where n is a number of one or more, and n is set to a relatively high value of two or more when the memory device is in a power saving mode or to a relatively low value when the memory device is in a program speed optimization mode.

10. The method of claim 1, wherein:

for each memory cell of a set of memory cells in the memory device, the determining whether the memory cell is in the high resistance state or the low resistance state comprises reading the memory cell.

11. A memory device, comprising:

a set of memory cells;

a conductive path connected to the set of memory cells; and

a control circuit, the control circuit, to program a unit of data into the set of memory cells is configured to;

determine, for each memory cell of the set of memory cells, whether the memory cell is in a high resistance state or a low resistance state;

identify from the set of memory cells, a first subset of memory cells, the first subset of memory cells comprises memory cells which are in the low resistance state and which are to be programmed to the high resistance state based on the unit of data;

identify from the set of memory cells, a second subset of memory cells, the second subset of memory cells comprises memory cells which are in the high resistance state and which are to be programmed to the low resistance state based on the unit of data; and

program the first subset of memory cells before the second subset of memory cells.

12. The memory device of claim 11, wherein:

the control circuit programs the first subset of memory cells in n sequential phases, where n is a number of two or more, and a different portion of the first subset of memory cells is programmed in each of the n sequential phases.

13. The memory device of claim 12, wherein:

the control circuit programs the second subset of memory cells in fewer than n sequential phases.

14. The memory device of claim 12, wherein:

n is set according to a current limit of the memory device so that an amount of current used in the programming of the first subset of memory cells in each of the n sequential phases does not exceed the current limit.

15. The memory device of claim 12, wherein:

n is set to a relatively high value when the memory device is in a power saving mode or to a relatively low value when the memory device is in a program speed optimization mode.

16. The memory device of claim 11, wherein:

for each memory cell of a set of memory cells in the memory device, the control circuit reads the memory cell to determine whether the memory cell is in the high resistance state or the low resistance state.