Semiconductor device and method of forming a metallurgical interconnection between a chip and a substrate in a flip chip package

• US 9,312,150 B2
• Filed: 10/07/2011
• Issued: 04/12/2016
• Est. Priority Date: 03/10/2000
• Status: Expired due to Term

• Current Assignee: Stats Chippac Pte. Lte.
• Original Assignee: Stats Chippac Limited
• Inventors: Ahmad, Nazir, Kweon, Young-Do, Tam, Samuel, Kim, Kyung-Moon, Pendse, Rajendra D.
• Primary Examiner(s): PARENDO, KEVIN A
• Application Number:
  US13/268,048
• Publication Number:
  US 20120049357A1
• Time in Patent Office: 1,649 Days
• Field of Search: 438/105, 438/615, 438/661
• US Class Current: 1/1
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 2224/10135 Alignment aids
• CPC Class Codes: H01L 2224/1134 Stud bumping, i.e. using a wire-bonding apparatus
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/29144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/73203 Bump and layer connectors
• CPC Class Codes: H01L 2224/81139 Guiding structures on the body
• CPC Class Codes: H01L 2224/81203 Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 2224/83102 using surface energy, e.g. capillary forces
• CPC Class Codes: H01L 2224/83191 wherein the layer connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83194 Lateral distribution of the layer connectors
• CPC Class Codes: H01L 2224/92125 the second connecting process involving a layer connector
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/81 using a bump connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01076 : Osmium [Os]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/181 : Encapsulation

Abstract

A method for forming metallurgical interconnections and polymer adhesion of a flip chip to a substrate includes providing a chip having a set of bumps formed on a bump side thereof and a substrate having a set of interconnect points on a metallization thereon, providing a measured quantity of a polymer adhesive in a middle region of the chip on the bump side, aligning the chip with the substrate so that the set of bumps aligns with the set of interconnect points, pressing the chip and the substrate toward one another so that a portion of the polymer adhesive contacts the substrate and the bumps contact the interconnect points, and heating the bumps to a temperature sufficiently high to form a metallurgical connection between the bumps and the interconnect points.

Claims

1. A method of making a semiconductor device, comprising:

providing a substrate singulated from a substrate panel;

forming a conductive layer including a first metal on the substrate;

providing a semiconductor wafer including a semiconductor die;

forming a bump including a second metal on the semiconductor die;

forming an adhesive layer over the substrate;

positioning the substrate proximate to the semiconductor die to contact the bump to the conductive layer and form a bonding interface;

curing the adhesive layer by heating the semiconductor die and bonding interface to a melting point of the first metal for a time sufficient to melt a portion of the first metal from the conductive layer and to cure the adhesive layer to secure the semiconductor die to the substrate;

dissolving a portion of the bump by metallurgically reacting the bump and the conductive layer at the melting point of the first metal;

forming a bonding phase at the bonding interface by mixing a dissolved portion of the bump with a molten portion of the first metal; and

singulating the semiconductor wafer to separate the semiconductor die after forming the bonding phase.

2. The method of claim 1, wherein the melting point of the first metal is less than a melting point of the second metal.

3. The method of claim 1, further including adhering a surface of the semiconductor die to a surface of the substrate with the adhesive layer that does not contact the bump or the conductive layer.

4. The method of claim 3, further including curing the adhesive layer simultaneously with the heating of the bonding interface and the forming of the bonding phase.

5. The method of claim 1, wherein the first metal includes tin and the second metal includes gold.

6. The method of claim 1, wherein metallurgically reacting the bump and the conductive layer includes increasing a temperature at the bonding interface above the melting point of the first metal.

7. A method of making a semiconductor device, comprising:

providing a substrate;

forming a conductive layer including a first metal on the substrate;

providing a semiconductor die;

forming a bump including a second metal on the semiconductor die;

forming an adhesive over the semiconductor die;

disposing the semiconductor die over the substrate to contact the bump to the conductive layer and form a bonding interface;

dissolving a portion of the bump by metallurgically reacting the bump and the conductive layer at a melting point of the first metal while simultaneously curing the adhesive to secure the semiconductor die to the substrate; and

forming a bonding phase at the bonding interface by mixing a dissolved portion of the bump with a molten portion of the first metal.

8. The method of claim 7, further including heating the bonding interface to the melting point of the first metal for a time sufficient to melt a portion of the first metal from the conductive layer.

9. The method of claim 8, wherein the first metal includes tin.

10. The method of claim 9, wherein the second metal includes gold.

11. The method of claim 10, wherein heating the bonding interface to the melting point of the first metal includes heating the bonding interface to a temperature of about 232 degrees Celsius for a duration of 1 to 2 seconds.

12. The method of claim 11, wherein forming the bonding phase includes mixing the tin with the gold to form a 4:

1 gold/tin alloy.

13. The method of claim 7, further including providing a semiconductor wafer including the semiconductor die.

14. The method of claim 13, further including disposing the semiconductor die over the substrate while the semiconductor die is disposed on the semiconductor wafer.

15. The method of claim 13, further including singulating the semiconductor wafer to separate the semiconductor die after forming the bonding phase.