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Thin-film transistor, method of manufacturing the same, and method of manufacturing backplane for flat panel display

  • US 9,312,395 B2
  • Filed: 07/23/2014
  • Issued: 04/12/2016
  • Est. Priority Date: 07/26/2013
  • Status: Active Grant
First Claim
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1. A method of manufacturing a thin-film transistor (TFT), the method comprising:

  • forming a gate electrode on a substrate;

    forming an insulating layer on the substrate to cover the gate electrode;

    performing a plasma treatment on an upper surface of the insulating layer, the plasma treatment using a halogen gas;

    forming an oxide semiconductor layer on the insulating layer and positioned to correspond to the gate electrode; and

    forming source and drain electrodes on the insulating layer and over portions of the oxide semiconductor layer;

    wherein the forming an insulating layer comprises forming the insulating layer by a sol-gel process using a solution comprising hafnium chloride (HfCl4) dissolved in a solvent that includes at least one of acetonitrile and ethylene glycol.

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