Nanowire structure and method for manufacturing the same

• US 9,312,442 B2
• Filed: 08/18/2015
• Issued: 04/12/2016
• Est. Priority Date: 06/18/2010
• Status: Active Grant

• Current Assignee: GLO Technologies LLC
• Original Assignee: Glo AB (Shoei Electronic Materials, Inc.)
• Inventors: Lowgren, Truls
• Primary Examiner(s): Tran, Tran
• Application Number:
  US14/829,299
• Publication Number:
  US 20150357520A1
• Time in Patent Office: 238 Days
• Field of Search: 438/22, 977/762
• US Class Current: 1/1
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/18 within the light emitting region
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: Y10S 977/762 Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less

Abstract

A light emitting diode (LED) structure includes a plurality of devices arranged side by side on a support layer. Each device includes a first conductivity type semiconductor nanowire core and an enclosing second conductivity type semiconductor shell for forming a pn or pin junction that in operation provides an active region for light generation. A first electrode layer extends over the plurality of devices and is in electrical contact with at least a top portion of the devices to connect to the shell. The first electrode layer is at least partly air-bridged between the devices.

Claims

1. A method of making a top emitting light emitting (LED) structure, comprising:

forming a plurality of devices located on a first surface of a support layer, the devices comprising a semiconductor nanowire core of a first conductivity type and a semiconductor shell of a second conductivity type;

forming a first transparent electrode which is electrically connected to the shells of the devices;

forming a second electrode located in electrical contact with the first surface of the support layer and electrically connected to the cores of the devices through the support layer;

providing a reflective layer below the cores of the devices and a carrier which is attached to the structure below the reflective layer;

forming a first contact electrically connecting the carrier to a first pad area of the first electrode; and

forming a second contact electrically connecting the carrier to a second pad area of the second electrode.