Semiconductor light emitting device and manufacturing method thereof

• US 9,312,444 B2
• Filed: 03/06/2013
• Issued: 04/12/2016
• Est. Priority Date: 08/30/2012
• Status: Active Grant

• Current Assignee: Seoul Semiconductor Co., Ltd.
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Sugawara, Hideto
• Primary Examiner(s): Kraig, William F
• Assistant Examiner(s): Malek, Maliheh
• Application Number:
  US13/787,739
• Publication Number:
  US 20140061660A1
• Time in Patent Office: 1,133 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A semiconductor light emitting device includes a supporting substrate, a light emitting layer including a nitride semiconductor, and a nitride multilayer film. The nitride multilayer film includes a first layer including a first nitride semiconductor containing aluminum nitride, a second layer including a second nitride semiconductor containing gallium nitride, and a third layer including the first nitride semiconductor containing aluminum nitride.

Claims

1. A method of manufacturing a semiconductor light emitting device, comprising:

performing epitaxial growth of a nitride multilayer film on an upper surface of a first substrate;

forming a light emitting layer including a nitride semiconductor on an upper surface of the nitride multilayer film;

joining a second substrate to an upper surface of a first laminate that includes the first substrate, the nitride multilayer film and the light emitting layer; and

removing the first substrate to expose a lower surface of the nitride multilayer film, the nitride multilayer film being at an exposed surface of a second laminate that includes the second substrate, the light emitting layer, and the nitride multilayer film forming an antireflection layer for light emitted from the light emitting layer,

wherein the epitaxial growth of the nitride multilayer film is performed by forming a first layer including a first nitride semiconductor containing aluminum, forming a second layer including a second nitride semiconductor with a refractive index different from the refractive index of the first nitride semiconductor, and forming a third layer including the first nitride semiconductor containing aluminum.

2. The method of claim 1, wherein the first substrate comprises one of a silicon substrate and a silicon nitride substrate.

3. The method of claim 1, wherein, during said performing the epitaxial growth of the nitride multilayer film, pairs of the first layer and the second layer are formed k times, where k is an integer of 1 or more, and thereafter the third layer is formed.

4. The method of claim 1, wherein, during said performing the epitaxial growth of the nitride multilayer film, the third layer is formed, and thereafter pairs of the second layer and the first layer are formed k times, where k is an integer of 1 or more.

5. The method of claim 1, wherein when a thickness of a pair including the first layer and the second layer is t, a thickness of the third layer is t₃, a wavelength of a light emitted from the light emitting layer is λ

, a refractive index of the first nitride semiconductor is n₁, and a refractive index of the second nitride semiconductor is n₂, the following equations are satisfied;

t=λ

/4n₁+λ

/4n₂, and

t₃=λ

/4n₁.

6. The method of claim 5, wherein when a thickness of the first layer is t₁ and a thickness of the second layer is t₂, the following equations are satisfied:

t₁=λ

/4n₁, and

t₂=λ

/4n₂.

7. The method of claim 1, wherein the first nitride semiconductor is Al_xGa_1-xN, x≧

0.5, and the second nitride semiconductor is gallium nitride.

8. A semiconductor light emitting device, comprising:

a substrate;

a light emitting layer including a nitride semiconductor formed on a surface of the substrate; and

a nitride multilayer film formed on the light emitting layer, the light emitting layer being between the surface of the substrate and the nitride multilayer film,

wherein the nitride multilayer film is formed from a first layer including a first nitride semiconductor containing aluminum, a second layer including a second nitride semiconductor having a refractive index different from the refractive index of the first nitride semiconductor, and a third layer including the first nitride semiconductor containing aluminum, such that the nitride multilayer film includes laminated k pairs of the first layer and the second layer, where k is an integer of 1 or more, and the third layer disposed on a side of the nitride multilayer film apart from the light emitting layer, and

wherein, when a thickness of the pair is t, a thickness of the third layer is t₃, a wavelength of a light emitted from the light emitting layer is λ

, a refractive index of the first nitride semiconductor is n₁, and a refractive index of the second nitride semiconductor is n₂, the following equations are satisfied;

t=λ

/4n₁+λ

/4n₂, and

t₃=λ

/4n₁.

9. The semiconductor light emitting device of claim 8, wherein, when a thickness of the first layer is t₁ and a thickness of the second layer is t₂, the following equations are satisfied:

t₁=λ

/4n₁, and

t₂=λ

/4n₂.

10. The semiconductor light emitting device of claim 8, wherein the first nitride semiconductor is Al_xGa_1-xN, x≧

0.5, and the second nitride semiconductor is gallium nitride.

11. The semiconductor light emitting device of claim 8, further comprising:

a gallium nitride layer between the light emitting layer and the nitride multilayer film.

12. The semiconductor light emitting device of claim 11, wherein the first layer includes aluminum nitride, and a thickness of the first layer is between 10 nm and 52 nm.

13. The semiconductor light emitting device of claim 11, further comprising:

a super lattice layer including GaN and InGaN, between the light emitting layer and the gallium nitride layer.

14. A method of manufacturing a semiconductor light emitting device, comprising:

bonding a first laminate including a semiconductor substrate, a nitride multilayer film formed on an upper surface of the semiconductor substrate, and a light emitting layer formed on an upper surface of the nitride multilayer film to a supporting substrate, the light emitting layer being between the supporting substrate and the nitride multilayer film; and

removing the semiconductor substrate to expose a lower surface of the nitride multilayer film, the nitride multilayer film being at an exposed surface of a second laminate that includes the supporting substrate, the light emitting layer, and the nitride multilayer film forming an antireflection layer for light emitted from the light emitting layer,

wherein the nitride multilayer film is formed from a first layer including a first nitride semiconductor containing aluminum, a second layer including a second nitride semiconductor having a refractive index different from the refractive index of the first nitride semiconductor, and a third layer including the first nitride semiconductor containing aluminum, such that the nitride multilayer film includes laminated k pairs of the first layer and the second layer, where k is an integer of 1 or more, and the third layer disposed on a side of the nitride multilayer film apart from the light emitting layer.

15. The method of claim 14, wherein the nitride multilayer film is epitaxially grown.

16. The method of claim 14, wherein the semiconductor substrate comprises one of a silicon substrate and a silicon nitride substrate.

17. The method of claim 14, wherein when a thickness of a pair including the first layer and the second layer is t, a thickness of the third layer is t₃, a wavelength of a light emitted from the light emitting layer is λ

, a refractive index of the first nitride semiconductor is n₁, and a refractive index of the second nitride semiconductor is n₂, the following equations are satisfied;

t=λ

/4n₁+λ

/4n₂, and

t₃=λ

/4n₁.

18. The method of claim 14, wherein when a thickness of the first layer is t₁ and a thickness of the second layer is t₂, the following equations are satisfied:

t₁=λ

/4n₁, and

t₂=λ

/4n₂.

19. The method of claim 14, wherein the first nitride semiconductor is Al_xGa_1-xN, x≧

0.5, and the second nitride semiconductor is gallium nitride.

20. A semiconductor light emitting device, comprising:

a substrate;

a light emitting layer including a nitride semiconductor formed on a surface of the substrate;

a nitride multilayer film formed on the light emitting layer, the light emitting layer being between the surface of the substrate and the nitride multilayer film;

a gallium nitride layer between the light emitting layer and the nitride multilayer film; and

a super lattice layer including GaN and InGaN, between the light emitting layer and the gallium nitride layer,

wherein the nitride multilayer film is formed from a first layer including a first nitride semiconductor containing aluminum, a second layer including a second nitride semiconductor having a refractive index different from the refractive index of the first nitride semiconductor, and a third layer including the first nitride semiconductor containing aluminum, such that the nitride multilayer film includes laminated k pairs of the first layer and the second layer, where k is an integer of 1 or more, and the third layer disposed on a side of the nitride multilayer film apart from the light emitting layer.