Light emitting device and light emitting device package

• US 9,312,450 B2
• Filed: 09/15/2014
• Issued: 04/12/2016
• Est. Priority Date: 03/09/2010
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Choi, Kwang Ki, Jeong, Hwan Hee, Lee, Sang Youl, Song, June O, Moon, Ji Hyung
• Primary Examiner(s): Mondt, Johannes P
• Application Number:
  US14/486,364
• Publication Number:
  US 20150034988A1
• Time in Patent Office: 575 Days
• Field of Search: 257/98, 257/99, 257/E33.066, 257/E33.067, 257/E33.068, 977/932
• US Class Current: 1/1
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: F21K 9/23 Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
• CPC Class Codes: F21W 2131/103 of streets or roads
• CPC Class Codes: F21Y 2105/10 comprising a two-dimensional array of point-like light-generating elements
• CPC Class Codes: F21Y 2113/13 comprising an assembly of point-like light sources
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first electrode, a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer on the first electrode, a nano-tube layer including a plurality of carbon nano tubes on the light emitting structure, and a second electrode on the light emitting structure.

Claims

1. A light emitting device comprising:

a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer;

a nano-tube layer including carbon nano tubes on the second semiconductor layer;

a current blocking layer between the second semiconductor layer and the nano-tube layer;

a first electrode electrically connected to the first semiconductor layer; and

a second electrode electrically connected to the second semiconductor layer,

wherein the second electrode includes a first portion on the current blocking layer, and a second portion on the first portion,

wherein the first portion of the second electrode contacts the current blocking layer, and

wherein the second portion of the second electrode contacts the nano-tube layer.

2. The light emitting device of claim 1,

wherein a part of the second electrode is disposed on a part of the nano-tube layer.

3. The light emitting device of claim 2,

wherein the part of the nano-tube layer is disposed between the part of the second electrode and the second semiconductor layer.

5. The light emitting device of claim 1, further comprising a concavo-convex structure on the light emitting structure.

6. The light emitting device of claim 1, further comprising a passivation layer on at least a lateral surface of the light emitting structure.

11. The light emitting device of claim 1, wherein a lateral width of the second portion is greater than a lateral width of the first portion.

12. The light emitting device of claim 1, wherein a top surface of the current blocking layer is higher than a bottom surface of the nano-tube layer.

4. A light emitting device comprising:

a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer;

a nano-tube layer including carbon nano tubes on the second semiconductor layer;

a current blocking layer between the second semiconductor layer and the nano-tube layer;

a first electrode electrically connected to the first semiconductor layer; and

a second electrode electrically connected to the second semiconductor layer,

wherein the nano-tube layer has a refractive index lower than a refractive index of the light emitting structure,

wherein the second electrode includes a first portion on the current blocking layer, and a second portion on the first portion,

wherein a top surface of the current blocking layer is higher than a bottom surface of the nano-tube layer.

13. The light emitting device of claim 4, wherein a lateral width of the second portion is greater than a lateral width of the first portion.

7. A light emitting device comprising:

a substrate;

a light emitting structure on the substrate and including a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer;

a first electrode electrically connected to the first semiconductor layer;

a nano-tube layer on the second semiconductor layer;

a current blocking layer between the second semiconductor layer and the nano-tube layer; and

a second electrode on the nano-tube layer,

wherein a portion of the nano-tube layer is disposed between the current blocking layer and the second electrode,

wherein the portion of the nano-tube layer disposed between the current blocking layer and the second electrode contacts a top surface of the current blocking layer, and

wherein the second electrode contacts a portion of the current blocking layer and the portion of the nano-tube layer.

8. The light emitting device of claim 7, wherein the nano-tube layer includes a through-hole, and

wherein a portion of the second electrode is disposed in the through-hole,

wherein the second electrode includes a first portion on the portion of the current blocking layer, and a second portion on the first portion of the second electrode.

9. The light emitting device of claim 8, wherein the current blocking layer is disposed in the through-hole, and

wherein a lateral width of the second portion of the second electrode is greater than a lateral width of the first portion of the second electrode.

10. The light emitting device of claim 7, wherein the top surface of the current blocking layer is higher than a bottom surface of the nano-tube layer.