Semiconductor light emitting device

• US 9,312,453 B2
• Filed: 04/30/2014
• Issued: 04/12/2016
• Est. Priority Date: 04/30/2013
• Status: Active Grant

• Current Assignee: Lumens Co., Ltd.
• Original Assignee: Semicon Light Co., Ltd.
• Inventors: Park, Eun Hyun, Jeon, Soo Kun
• Primary Examiner(s): LE, DUNG ANH
• Application Number:
  US14/383,420
• Publication Number:
  US 20150236215A1
• Time in Patent Office: 713 Days
• Field of Search: 257 12- 13, 257/40, 257/81, 257/84, 257 87- 89, 257 98-100, 257347-348, 257433-434, 313/112, 313/501, 313/503, 313506-507
• US Class Current: 1/1
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

The present disclosure relates to a semiconductor light emitting device, which comprises a plurality of semiconductor layers; a contact area where a first semiconductor layer is exposed as a result of the partial removal of a second semiconductor layer and an active layer; a non-conductive reflective film adapted to cover the second semiconductor layer and the contact area, such that light from the active layer is reflected towards the first semiconductor layer on the side of a growth substrate; a finger electrode extending between the non-conductive reflective film and the plurality of semiconductor layers; an electrical connection adapted to pass through the non-conductive reflective film and be electrically connected with the finger electrode; and a direct-connection type electrical connection adapted to pass through the non-conductive reflective film and be electrically connected with the plurality of semiconductor layers.

Claims

1. A semiconductor light emitting device, comprising:

a plurality of semiconductor layers, which grows sequentially using a growth substrate, and which includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination;

a contact area where a first semiconductor layer is exposed as a result of the partial removal of a second semiconductor layer and an active layer;

a non-conductive reflective film adapted to cover the second semiconductor layer and the contact area, such that light from the active layer is reflected towards the first semiconductor layer on the side of a growth substrate;

a first finger electrode extending between the non-conductive reflective film and the second semiconductor layer;

a first electrical connection adapted to pass through the non-conductive reflective film and be electrically connected with the first finger electrode; and

a first direct-connection type electrical connection adapted to pass through the non-conductive reflective film and be electrically connected with the second semiconductor layer.

2. The semiconductor light emitting device as claimed in claim 1, further comprising:

a first electrode which is formed above the non-conductive reflective film to cover the first electrical connection and the first direct-connection type electrical connection and supplies either electrons or holes to the second semiconductor layer; and

a second electrode which is formed above the non-conductive reflective film, away from the first electrode and supplies to the first semiconductor layer, through the contact area, electrons if holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode.

3. The semiconductor light emitting device as claimed in claim 2, wherein the first electrical connection is arranged at the lower portion of a region of the first electrode adjacent to the second electrode, and the first direct-connection type electrical connection is arranged at the lower portion of a region of the first electrode that is farther away from the second electrode than the first electrical connection.

4. The semiconductor light emitting device as claimed in claim 3, wherein the first finger electrode extends towards the second electrode from the first electrical connection.

5. The semiconductor light emitting device as claimed in claim 4,

wherein the contact area has a dot-like contact zone located at the lower portion of the second electrode, and

wherein the semiconductor light emitting device further comprises a second direct-connection type electrical connection which passes through the non-conductive reflective film and electrically connects the second electrode with the first semiconductor layer within the dot-like contact zone.

6. The semiconductor light emitting device as claimed in claim 4,

wherein the contact area has a linear contact zone extending from the lower portion of a region of the second electrode adjacent to the first electrode towards the first electrode, and a dot-like contact zone arranged at the lower portion of a region of the second electrode distant from the first electrode, being away from the linear contact zone;

and

wherein the semiconductor light emitting device further comprises;

a second finger electrode extending, between the first semiconductor layer within the linear contact zone and the non-conductive reflective film, in the direction of the first electrode from the lower portion of the second electrode,

a second electrical connection which passes through the non-conductive reflective film and electrically connects the second electrode with the second finger electrode, and

a second direct-connection type electrical connection which passes through the non-conductive reflective film and electrically connects the second electrode with the first semiconductor layer within the dot-like contact zone.

7. The semiconductor light emitting device as claimed in claim 4, wherein the first finger electrode has a first extension finger part extending, additionally, from the lower portion of the second electrode, at an angle with the first finger electrode.

8. The semiconductor light emitting device as claimed in claim 6, wherein the first finger electrode has a first extension finger part extending, additionally, from the lower portion of a region of the second electrode between the second electrical connection and the second direct-connection type electrical connection, at an angle with the first finger electrode.

9. The semiconductor light emitting device as claimed in claim 8, comprising at least two first finger electrodes, wherein each of the at least two first finger electrodes having a first extension finger part, and the first extension finger parts are interconnected at the lower portion of the second electrode.

10. The semiconductor light emitting device as claimed in claim 6, wherein the linear contact zone has an additional extension contact zone, extending, additionally, from the lower portion of a region of the first electrode between the first electrical connection and the first direct-connection type electrical connection, at an angle with the linear contact zone, and

wherein the second finger electrode has a second extension finger part, extending, additionally, along the additional extension contact zone.

11. The semiconductor light emitting device as claimed in claim 10, comprising at least two linear contact zones and at least two second finger electrodes, wherein each of the at least two second finger electrodes having a second extension finger part, and the second extension finger parts are interconnected at the lower portion of the first electrode.

12. The semiconductor light emitting device as claimed in claim 4, wherein the first electrode has a larger width than that of the second electrode, in the extension direction of the first finger electrode.

13. The semiconductor light emitting device as claimed in claim 1, further comprising:

optical absorption barriers provided between the first finger electrode and the first direct-connection type electrical connection and the second semiconductor layer, respectively.

14. A semiconductor light emitting device, comprising:

a plurality of semiconductor layers, which grows sequentially using a growth substrate, and which includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination;

a contact area where a first semiconductor layer is exposed as a result of the partial removal of a second semiconductor layer and an active layer;

a non-conductive reflective film adapted to cover the second semiconductor layer and the contact area, such that light from the active layer is reflected towards the first semiconductor layer on the side of a growth substrate;

a finger electrode extending between the non-conductive reflective film and the plurality of semiconductor layers;

an electrical connection adapted to pass through the non-conductive reflective film and be electrically connected with the finger electrode; and

a direct-connection type electrical connection adapted to pass through the non-conductive reflective film and be electrically connected with the plurality of semiconductor layers.