Light-emitting device

• US 9,312,463 B2
• Filed: 04/10/2015
• Issued: 04/12/2016
• Est. Priority Date: 12/31/2008
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Hsu, Chia-Liang
• Primary Examiner(s): MOORE, WHITNEY
• Application Number:
  US14/683,912
• Publication Number:
  US 20150214454A1
• Time in Patent Office: 368 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/24225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 2224/92244 the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/483 Containers
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light-emitting device comprises: a supporting member having a top surface with a first surface area and a bottom surface with a second surface area; a first conductive via having a top surface with a third surface area; a second conductive via separated from the first conductive via and having a top surface with a fourth surface area, wherein the supporting member surrounds the first conductive via and the second conductive via; and a semiconductor structure comprising an active layer on the supporting member; wherein the sum of the third surface area and the fourth surface area is greater than 40% of the first surface area and smaller than the first surface area.

Claims

1. A light-emitting device, comprising:

a supporting member having a top surface with a first surface area and a bottom surface with a second surface area;

a first conductive via having a top surface with a third surface area;

a second conductive via separated from the first conductive via and having a top surface with a fourth surface area, wherein the supporting member surrounds the first conductive via and the second conductive via; and

a semiconductor structure comprising an active layer on the supporting member;

wherein the sum of the third surface area and the fourth surface area is greater than 40% of the first surface area and smaller than the first surface area.

2. The light-emitting device according to claim 1, wherein the semiconductor structure further comprises a first conductive type semiconductor layer on the active layer and comprises a second conductive type semiconductor layer between the top surface of the supporting member and the active layer, and the second conductive type semiconductor layer electrically connects with the second conductive via.

3. The light-emitting device according to claim 2, further comprising an electrode and an insulation structure, wherein the electrode is on the first conductive type semiconductor layer, and the insulation structure is between the electrode and the supporting member.

4. The light-emitting device according to claim 3, further comprising a conductive structure electrically connecting the first conductive type semiconductor layer to the first conductive via.

5. The light-emitting device according to claim 4, wherein the conductive structure directly contacts the electrode, the insulation structure and the first conductive via.

6. The light-emitting device according to claim 4, wherein the conductive structure is formed on a sidewall of the active layer.

7. The light-emitting device according to claim 4, wherein the insulation structure is formed on a sidewall of the active layer.

8. The light-emitting device according to claim 4, wherein the insulation structure is between the conductive structure and the active layer.

9. The light-emitting device according to claim 3, wherein the semiconductor structure is between the electrode and the second conductive via.

10. The light-emitting device according to claim 2, further comprising a conductive structure electrically connecting the first conductive type semiconductor layer to the first conductive via.

11. The light-emitting device according to claim 2, wherein the first conductive type semiconductor layer is n-type.

12. The light-emitting device according to claim 2, wherein the second conductive type semiconductor layer aligns with the second conductive via.

13. The light-emitting device according to claim 2, further comprising a conductive layer between the second conductive type semiconductor layer and the supporting member for electrically connected the second conductive type semiconductor layer to the second conductive via.

14. The light-emitting device according to claim 13, wherein a transverse width of the conductive layer is substantially the same as a transverse width of the semiconductor structure.

15. The light-emitting device according to claim 1, wherein the third surface area is different from the fourth surface area.

16. The light-emitting device according to claim 1, wherein the active layer of the semiconductor structure has a fifth surface area greater than 30% of the first surface area and smaller than the first surface area.

17. The light-emitting device according to claim 1, wherein the semiconductor structure is separated from a growth substrate on which the semiconductor structure is originally formed such that the light-emitting device is devoid of the growth substrate.

18. The light-emitting device according to claim 1, further comprising a conductive structure on the supporting member, on a side wall of the semiconductor structure, and electrically connected the semiconductor structure to the first conductive via.

19. The light-emitting device according to claim 1, wherein the supporting member comprises flexible material.

20. The light-emitting device according to claim 1, wherein the supporting member has a thickness smaller than 200 μ

m.