Magnetoresistive element, magnetic memory, and method of manufacturing magnetoresistive element

• US 9,312,475 B2
• Filed: 01/03/2014
• Issued: 04/12/2016
• Est. Priority Date: 07/04/2011
• Status: Active Grant

• Current Assignee: Kioxia Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Nagase, Toshihiko, Watanabe, Daisuke, Ueda, Koji, Nishiyama, Katsuya, Kitagawa, Eiji, Noma, Kenji, Kai, Tadashi
• Primary Examiner(s): Norman, James G
• Application Number:
  US14/147,072
• Publication Number:
  US 20140119109A1
• Time in Patent Office: 830 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1659 Cell access
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

According to one embodiment, a magnetoresistive element includes first and second magnetic layers, a first nonmagnetic layer, a conductive layer. The first and second magnetic layers have axes of easy magnetization perpendicular to a film plane. The first and second magnetic layers have variable and invariable magnetization directions, respectively. The first nonmagnetic layer is between the first and second magnetic layers. The conductive layer is on a surface of the first magnetic layer opposite to a surface on which the first nonmagnetic layer is formed. The first magnetic layer has a structure obtained by alternately laminating magnetic and nonmagnetic materials. The nonmagnetic material includes at least one of Ta, W, Nb, Mo, Zr, Hf. The magnetic material includes Co and Fe. One of the magnetic materials contacts the first nonmagnetic layer. One of the nonmagnetic materials contacts the conductive layer.

Claims

1. A magnetoresistive element comprising:

a first magnetic layer having an axis of easy magnetization perpendicular to a film plane, and a variable magnetization direction;

a second magnetic layer having an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization direction;

a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer; and

a conductive layer formed on a surface of the first magnetic layer, which is opposite to a surface on which the first nonmagnetic layer is formed,

wherein the first magnetic layer comprises;

a first magnetic material including Co and Fe;

a first nonmagnetic material including at least one element from among Ta, W, Nb, Mo, Zr and Hf;

a second nonmagnetic material including at least one element from among Ta, W, Nb, Mo, Zr and Hf; and

a second magnetic material including Co and Fe,

wherein the first magnetic material contacts the first nonmagnetic layer and includes a crystallized portion, the first nonmagnetic material contacts the conductive layer, the second nonmagnetic material is between the first magnetic material and the first nonmagnetic material and includes an amorphous state, and the second magnetic material is between the second nonmagnetic material and the first nonmagnetic material and includes an amorphous state.

2. The magnetoresistive element according to claim 1, wherein the first magnetic material is made of a CoFe alloy or an alloy (Co_100-x—

Fe_x)_100-yB_y containing Co, Fe and B where x≧

50 at % and 0<

y≦

30 at %.

3. The magnetoresistive element according to claim 1, wherein the first magnetic material and the second magnetic material have different crystalline states.

4. The magnetoresistive element according to claim 1, wherein the first magnetic layer has a structure in which a magnetic material, a nonmagnetic material, a magnetic material and a nonmagnetic material are laminated in this order between the first nonmagnetic layer and the conductive layer from the first nonmagnetic layer side.

5. The magnetoresistive element according to claim 1, further comprising:

an interface layer which is arranged between the second magnetic layer and the first nonmagnetic layer and has a high polarization.

6. The magnetoresistive element according to claim 1, further comprising:

a shift cancelling layer formed on a surface of the second magnetic layer, which is opposite to a surface on which the first nonmagnetic layer is formed, and which has a magnetization direction reverse to the magnetization direction of the second magnetic layer; and

a second nonmagnetic layer arranged between the second magnetic layer and the shift cancelling layer.

7. The magnetoresistive element according to claim 6, wherein the second nonmagnetic layer includes Ru.

8. The magnetoresistive element according to claim 1, further comprising:

a shift cancelling layer which is arranged between the first magnetic layer and the conductive layer and has a magnetization direction reverse to the magnetization direction of the second magnetic layer; and

a second nonmagnetic layer arranged between the first magnetic layer and the shift cancelling layer.

9. The magnetoresistive element according to claim 8, wherein the second nonmagnetic layer includes Ru.

10. The magnetoresistive element according to claim 1, further comprising

a cap layer formed on a surface of the second magnetic layer, which is opposite to a surface on which the first nonmagnetic layer is formed.

11. The magnetoresistive element according to claim 1, wherein the first nonmagnetic layer includes a tunnel barrier layer.

12. The magnetoresistive element according to claim 11, wherein the first nonmagnetic layer includes any one of MgO, CaO, SrO, TiO, VO and NbO.

13. The magnetoresistive element according to claim 1, wherein the conductive layer includes an interconnect layer.

14. The magnetoresistive element according to claim 1, wherein the conductive layer includes Ta or Ru.

15. A magnetic memory comprising a memory cell including the magnetoresistive element according to claim 1, and first and second electrodes for sandwiching the magnetoresistive element and for electrically conducting the magnetoresistive element.

16. The magnetic memory according to claim 15, further comprising:

a first interconnect electrically connected to the first electrode;

a second interconnect electrically connected to the second electrode; and

a write circuit which is electrically connected to the first interconnect and the second interconnect and supplies a bidirectional current to the magnetoresistive element.

17. A method of manufacturing a magnetoresistive element comprising:

forming a first nonmagnetic material;

forming a first magnetic material on the first nonmagnetic material;

forming a second nonmagnetic material on the first magnetic material;

forming a second magnetic material on the second nonmagnetic material;

forming a nonmagnetic layer on the second magnetic material;

forming a magnetic layer on the nonmagnetic layer; and

performing a thermal processing after forming the magnetic layer,

wherein after the thermal processing, the second magnetic material includes a crystallized portion, the second nonmagnetic material includes an amorphous state, and the first magnetic material includes an amorphous state.

18. The method of manufacturing a magnetoresistive element according to claim 17,

wherein the second magnetic material is less likely to be crystallized from the second nonmagnetic material side and is likely to be crystallized from the nonmagnetic layer side.