Solid-state imaging element having image signal overflow path
First Claim
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1. An imaging device comprising:
- a plurality of pixels, at least one of the pixels includinga photoelectric conversion element,a transfer transistor having a control terminal connected to a first control line, a first terminal connected to the photoelectric conversion element, and a second terminal connected to a charge store element,a reset transistor having a control terminal connected to a second control line, a first terminal connected to a first voltage line, and a second terminal connected to the charge store element, andan amplifying transistor having a control terminal connected to the charge store element, a first terminal connected to a second voltage line, and a second terminal connected to a signal line,wherein a LOCOS (Local Oxidation of Silicon) oxide film is arranged between said photoelectric conversion element and a contact region, the contact region being electrically connected to the second voltage line.
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Abstract
Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse φVn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.
42 Citations
19 Claims
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1. An imaging device comprising:
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a plurality of pixels, at least one of the pixels including a photoelectric conversion element, a transfer transistor having a control terminal connected to a first control line, a first terminal connected to the photoelectric conversion element, and a second terminal connected to a charge store element, a reset transistor having a control terminal connected to a second control line, a first terminal connected to a first voltage line, and a second terminal connected to the charge store element, and an amplifying transistor having a control terminal connected to the charge store element, a first terminal connected to a second voltage line, and a second terminal connected to a signal line, wherein a LOCOS (Local Oxidation of Silicon) oxide film is arranged between said photoelectric conversion element and a contact region, the contact region being electrically connected to the second voltage line. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. An imaging device comprising:
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a plurality of pixels, at least one of the pixels including a photoelectric conversion element, a transfer transistor configured to transfer charges from the photoelectric conversion element to a charge store element, a reset transistor configured to reset a potential of the photoelectric conversion element, and an amplifying transistor configured to output signals according to a potential of the photoelectric conversion element to a signal line, wherein the amplifying transistor is applied a voltage, and wherein a LOCOS (Local Oxidation of Silicon) oxide film is arranged between said photoelectric conversion element and a contact region, the contact region applied the voltage. - View Dependent Claims (19)
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Specification