Ductile mode drilling methods for brittle components of plasma processing apparatuses
First Claim
1. A method of ductile mode drilling holes in a component of a plasma processing apparatus with a cutting tool wherein the component is made of a nonmetallic hard and brittle material comprising:
- drilling each hole in the component by controlling a depth of cut while drilling such that a portion of the brittle material undergoes high pressure phase transformation and forms amorphous portions of the brittle material during chip formation; and
removing amorphous portions of the brittle material from each hole such that a wall of each hole formed in the component has an as drilled surface roughness (Ra) of about 0.2 to 0.8 μ
m;
wherein the component is a silicon or silicon carbide showerhead electrode.
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Accused Products
Abstract
A method of drilling holes comprises ductile mode drilling the holes in a component of a plasma processing apparatus with a cutting tool wherein the component is made of a nonmetallic hard and brittle material. The method comprises drilling each hole in the component by controlling a depth of cut while drilling such that a portion of the brittle material undergoes high pressure phase transformation and forms amorphous portions of the brittle material during chip formation. The amorphous portions of the brittle material are removed from each hole such that a wall of each hole formed in the component has an as drilled surface roughness (Ra) of about 0.2 to 0.8 μm.
62 Citations
19 Claims
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1. A method of ductile mode drilling holes in a component of a plasma processing apparatus with a cutting tool wherein the component is made of a nonmetallic hard and brittle material comprising:
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drilling each hole in the component by controlling a depth of cut while drilling such that a portion of the brittle material undergoes high pressure phase transformation and forms amorphous portions of the brittle material during chip formation; and removing amorphous portions of the brittle material from each hole such that a wall of each hole formed in the component has an as drilled surface roughness (Ra) of about 0.2 to 0.8 μ
m;wherein the component is a silicon or silicon carbide showerhead electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of ductile mode drilling holes in a component of a plasma processing apparatus with a cutting tool wherein the component is made of a nonmetallic hard and brittle material comprising:
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drilling each hole in the component by controlling a depth of cut while drilling such that a portion of the brittle material undergoes high pressure phase transformation and forms amorphous portions of the brittle material during chip formation; and removing amorphous portions of the brittle material from each hole such that a wall of each hole formed in the component has an as drilled surface roughness (Ra) of about 0.2 to 0.8 μ
m;
wherein the ductile mode drilling is performed with a drill speed of about 20,000 to 60,000 revolutions per minute, a feed rate at about 0.5 to 1.5 inches per minute, a peck depth of about 0.001 to 0.004 inch, and a depth of cut less than about 450 nanometers per revolution. - View Dependent Claims (18, 19)
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Specification