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Word line kick during sensing: trimming and adjacent word lines

  • US 9,318,210 B1
  • Filed: 02/02/2015
  • Issued: 04/19/2016
  • Est. Priority Date: 02/02/2015
  • Status: Active Grant
First Claim
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1. A method of operating a non-volatile memory array formed according to a NAND-type of architecture, comprising:

  • performing a sensing operation for memory cells along a selected word line with the word lines of the array biased to a first set of bias conditions, the first set of bias conditions including;

    driving the selected word line at a first sensing voltage; and

    driving non-selected word lines of the array at a voltage level to allow the memory cells therealong to conduct; and

    prior to performing the sensing operation, establishing the first set bias conditions, including;

    setting the non-selected word lines to the voltage to allow the memory cells therealong to conduct; and

    subsequently raising the selected word line from an initial level to the first sensing voltage, wherein, while selected word line is being raised, the voltage level for a non-selected word line adjacent to the selected word line is lowered from, and then returned to, the voltage to allow the memory cells therealong to conduct.

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