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Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same

  • US 9,318,327 B2
  • Filed: 11/28/2006
  • Issued: 04/19/2016
  • Est. Priority Date: 11/28/2006
  • Status: Active Grant
First Claim
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1. A semiconductor device structure suitable for use in the fabrication of electronic devices such as light emitting diodes, comprising:

  • a substrate comprising a substantially randomly or irregularly roughened growth surface suitable for supporting the growth of an epitaxial region thereon, wherein the roughened growth surface of said substrate has an average roughness Ra of at least about 1 nanometer (nm);

    an epitaxial region on said substrate; and

    first and second ohmic contacts on opposite sides of said semiconductor device, such that said semiconductor device is a vertical semiconductor device.

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