Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same
First Claim
1. A semiconductor device structure suitable for use in the fabrication of electronic devices such as light emitting diodes, comprising:
- a substrate comprising a substantially randomly or irregularly roughened growth surface suitable for supporting the growth of an epitaxial region thereon, wherein the roughened growth surface of said substrate has an average roughness Ra of at least about 1 nanometer (nm);
an epitaxial region on said substrate; and
first and second ohmic contacts on opposite sides of said semiconductor device, such that said semiconductor device is a vertical semiconductor device.
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Abstract
Semiconductor device structures are provided that are suitable for use in the fabrication of electronic devices such as light emitting diodes. The semiconductor device structures include a substrate having a roughened growth surface suitable for supporting the growth of an epitaxial region thereon. The device structure can include an epitaxial region having reduced defects and/or improved radiation extraction efficiency on the roughened growth surface of the substrate. The roughened growth surface of the substrate can have an average roughness Ra of at least about 1 nanometer (nm) and an average peak to valley height Rz of at least about 10 nanometers (nm).
74 Citations
65 Claims
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1. A semiconductor device structure suitable for use in the fabrication of electronic devices such as light emitting diodes, comprising:
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a substrate comprising a substantially randomly or irregularly roughened growth surface suitable for supporting the growth of an epitaxial region thereon, wherein the roughened growth surface of said substrate has an average roughness Ra of at least about 1 nanometer (nm); an epitaxial region on said substrate; and first and second ohmic contacts on opposite sides of said semiconductor device, such that said semiconductor device is a vertical semiconductor device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A light emitting diode, comprising:
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a conductive substrate comprising a substantially randomly or irregularly roughened growth surface suitable for supporting the growth of an epitaxial region thereon, wherein the roughened growth surface of the conductive substrate has an average roughness Ra of at least about 1 nanometer (nm); a diode region comprising an epitaxial region on the growth surface of the conductive substrate; and a first ohmic layer on a surface of the conductive substrate opposite the diode region and a second ohmic contact on a surface of the diode region opposite the conductive substrate. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
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35. A method of fabricating a semiconductor device structure suitable for use in the fabrication of electronic devices such as light emitting diodes, comprising:
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treating a substrate growth surface suitable for supporting the growth of an epitaxial region thereon to substantially randomly or irregularly roughen the growth surface sufficient to provide a growth surface having an average roughness Ra of at least about 1 nanometer (nm); forming an epitaxial region on the roughened growth surface of the substrate; and providing first and second ohmic contacts on opposite sides of said semiconductor device, such that said semiconductor device is a vertical semiconductor device. - View Dependent Claims (36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62)
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63. A semiconductor device, comprising:
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a substrate comprising a substantially randomly or irregularly roughened growth surface and a substantially randomly or irregularly roughened emission surface, said growth and emission surfaces opposing each other; and an epitaxial region on said roughened growth surface of said substrate, said epitaxial region having fewer threading dislocation defects than a substantially identical epitaxial region on a smooth growth surface. - View Dependent Claims (64)
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65. A semiconductor device structure suitable for use in the fabrication of electronic devices such as light emitting diodes, comprising:
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a substrate comprising a substantially randomly or irregularly roughened growth surface suitable for supporting the growth of an epitaxial region thereon, wherein the roughened growth surface of the substrate has an average roughness Ra of at least about 1 nanometer (nm); a conductive buffer layer on said substrate; and a diode region on said conductive region, said diode region comprising; an active region capable of emitting radiation; an n-type layer along a first surface of the active region; and a p-type layer on a second, opposing surface of the active region.
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Specification