Grid for plasma ion implant
First Claim
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1. A grid for a plasma ion implant, comprising:
- a flat plate having a plurality of elongated holes dispersed over its surface, each of the elongated holes having a cross-sectional shape of an elongated oval having a major axis and minor axis, and having a defined depth extending through the flat plate, wherein a major axis of each of the elongated holes is configured to be aligned in a direction perpendicular to a long axis of features to be implanted on a substrate when the grid is installed inside a plasma ion implant system.
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Abstract
A grid for minimizing effects of ion divergence in plasma ion implant. The plasma grid is made of a flat plate having a plurality of holes, wherein the holes are arranged in a plurality of rows and a plurality of columns thereby forming beamlets of ions that diverge in one direction. A mask is used to form the implanted shapes on the wafer, wherein the holes in the mask are oriented orthogonally to the direction of beamlet divergence.
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Citations
22 Claims
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1. A grid for a plasma ion implant, comprising:
a flat plate having a plurality of elongated holes dispersed over its surface, each of the elongated holes having a cross-sectional shape of an elongated oval having a major axis and minor axis, and having a defined depth extending through the flat plate, wherein a major axis of each of the elongated holes is configured to be aligned in a direction perpendicular to a long axis of features to be implanted on a substrate when the grid is installed inside a plasma ion implant system. - View Dependent Claims (2, 3, 4, 5)
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6. A grid for a plasma ion implant, comprising:
a flat plate having a plurality of round holes, wherein the holes are arranged in a plurality of rows and a plurality of columns within a rectangular area and wherein each of the holes in each column is shifted from alignment with the holes in the preceding and following column, such that a line passing through the center of all of the holes in a selected row forms an acute angle with sides of the rectangular area.
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7. A grid for a plasma ion implant, comprising:
a flat plate having a plurality of round holes, wherein the holes are arranged in a plurality of rows and a plurality of columns and wherein each of the holes in each column is shifted from alignment with the holes in the preceding and following column, such that a line passing through the center of all of the holes in a selected row forms an acute angle with the direction of travel of a substrate to be implanted.
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8. A grid for a plasma ion implant, comprising:
a flat plate having a plurality of round holes, wherein the holes are arranged in a plurality of rows and a plurality of columns thereby forming dead zones in between the holes, such that each of the holes in each column is shifted from alignment with the holes in the preceding and following column, such that a line passing through the center of all of the dead zones in a selected row forms an acute angle with a direction of travel of a substrate to be implanted.
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9. A combination of exit grid and implant mask for a plasma-based ion implant system, wherein:
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the exit grid comprises a flat plate having a plurality of elongated holes dispersed over its surface, each of the elongated holes having a cross-sectional shape of an elongated oval having a major axis and minor axis, and having a defined depth extending through the flat plate to enable ions to pass through the elongated holes; the implant mask comprises a flat plate having a plurality of linear holes dispersed over its surface, each of the linear holes having a cross-sectional shape of an elongated oval having a long axis and short axis, and having a defined depth extending through the flat plate to enable ions to pass through the linear holes, wherein the linear holes are arranged in a plurality of parallel rows and linear holes in each row are separated from each other by ion blocking bridges; and
,wherein a major axis of each of the elongated holes is aligned in a direction perpendicular to a long axis of the linear holes. - View Dependent Claims (10, 11)
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12. A plasma ion implant system, comprising:
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a processing chamber; a grid assembly placed in the plasma chamber and dividing the processing chamber into a plasma section and ion implant section; a transport mechanism for transporting substrates in a travel direction and positioning the substrate under the grid assembly; wherein the grid assembly comprises a flat plate having a plurality of holes, wherein the holes are arranged in a plurality of rows and a plurality of columns and wherein each of the holes in each column is shifted from alignment with the holes in the preceding and following column, such that a line passing through the center of all of the holes in a selected row forms an acute angle with the travel direction. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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19. An ion implant system, comprising:
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a processing chamber; a plasma grid placed in the plasma chamber and dividing the processing chamber into a plasma section and ion implant section, the plasma grid comprising a plurality of holes configured to enable ions to pass from the plasma chamber into the processing chamber by forming ion beamlets, wherein ions in the ion beamlets diverge in a first direction; a mask positioned below the plasma grid and comprising a flat plate having a plurality of holes arranged as parallel lines, wherein each hole is shaped as a line segment and wherein ion blocking bridges are provided between each two line segments in a row, and wherein the line segments are oriented in a second direction perpendicular to the first direction.
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20. A method for implanting ions into a substrate to thereby form parallel implanted lines in the substrate, comprising:
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introducing a substrate to be implanted into a plasma processing chamber; positioning a mask at a predetermined gap above the substrate, the mask comprising a plurality of line segments arranged in parallel rows, wherein line segments in each row are separated by bridges that block ions impinging thereupon and the line segments in each row correspond to one implanted line; igniting plasma in the plasma processing chamber and extracting ions from the plasma so as to form beamlets of ions having divergence in a direction parallel to the direction of the rows; and
,directing the beamlets to pass through the mask and implant into the substrate to thereby form the parallel implanted lines. - View Dependent Claims (21, 22)
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Specification