Method to improve etch selectivity during silicon nitride spacer etch
First Claim
1. A method of etching features on a substrate, the method comprising:
- positioning a substrate on a substrate holder in a plasma processing chamber, the substrate having a silicon nitride film covering structures on the substrate;
flowing a first process gas mixture into the plasma processing system, the first process gas mixture comprising a halogen-containing gas;
flowing a second process gas mixture into the plasma processing system, the second process gas mixture comprising an oxygen-containing gas;
maintain plasma using the first process gas mixture and the second process gas mixture;
repeatedly varying a flow rate of the first process gas mixture or repeatedly varying a flow rate of the second process gas mixture such that a gas flow ratio of the halogen-containing gas to the oxygen-containing gas fluctuates repeatedly between a first gas ratio and a second gas ratio; and
anisotropically directing products of the plasma toward the substrate.
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Abstract
Techniques herein include methods to increase etching selectivity among materials. Techniques herein include a cyclical process of etching and oxidation of a silicon nitride (SiN) spacer and silicon (such as polycrystalline silicon). This technique can increase selectivity to the silicon so that silicon is less likely to be etched or damaged while silicon nitride is etched from sidewalls. Techniques and chemistries as disclosed herein can be more selective to silicon oxide and silicon as compared to silicon nitride. An oxidizing step creates an oxide protection film on silicon surfaces that is comparatively thicker to any oxide film formed on nitride surfaces. As such, techniques here enable better removal of silicon nitride and silicon nitride spacer materials.
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Citations
21 Claims
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1. A method of etching features on a substrate, the method comprising:
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positioning a substrate on a substrate holder in a plasma processing chamber, the substrate having a silicon nitride film covering structures on the substrate; flowing a first process gas mixture into the plasma processing system, the first process gas mixture comprising a halogen-containing gas; flowing a second process gas mixture into the plasma processing system, the second process gas mixture comprising an oxygen-containing gas; maintain plasma using the first process gas mixture and the second process gas mixture; repeatedly varying a flow rate of the first process gas mixture or repeatedly varying a flow rate of the second process gas mixture such that a gas flow ratio of the halogen-containing gas to the oxygen-containing gas fluctuates repeatedly between a first gas ratio and a second gas ratio; and anisotropically directing products of the plasma toward the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of etching features on a substrate, the method comprising:
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positioning a substrate on a substrate holder in a plasma processing chamber, the substrate having a silicon nitride film conformally covering structures on the substrate, the structures including gate structures and fin structures of a FinFET structure; flowing a first process gas mixture into the plasma processing system, the first process gas mixture comprising a hydrofluorocarbon gas; flowing a second process gas mixture into the plasma processing system, the second process gas mixture comprising an oxygen-containing gas; forming plasma from the first process gas mixture and the second process gas mixture; repeatedly varying a flow rate of the first process gas mixture or repeatedly varying a flow rate of the second process gas mixture such that a gas flow ratio of the hydrofluorocarbon gas to the oxygen-containing gas repeatedly fluctuates between a first gas ratio defining an etch period and a second gas ratio defining an oxidation period and having a greater proportion of oxygen-containing gas as compared to the etch period such that a protection layer of SiOF forms on exposed silicon surfaces during the oxidation period and etching of silicon nitride occurs during the etch period, wherein the etch period has a duration that is at least three times greater than a duration of the oxidation period; and anisotropically directing products of the plasma toward the substrate at least until silicon nitride is removed from fin structures.
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19. A method of etching features on a substrate, the method comprising:
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positioning a substrate in a plasma processing chamber, the substrate having a silicon nitride film conformally covering structures on the substrate, the structures including gate structures and fin structures of a FinFET structure; establishing a plasma in the plasma processing chamber from a gas mixture of a hydrofluorocarbon gas and an oxygen-containing gas; and performing a cyclic anisotropic etch using the plasma to achieve a target level of removal of the silicon nitride film from the fin structures and from a portion of the gate structures while leaving the silicon nitride film on at least a portion of the sidewalls of the gate structures to form sidewall spacers, wherein the cyclic anisotropic etch comprises repeatedly cycling between an etching step a) and an oxidation step b) until step a) achieves the target level of removal, wherein the etching step a) and the oxidation step b) comprise, respectively; a) for a first duration, flowing the hydrofluorocarbon gas and the oxygen-containing gas into the plasma processing system at respective first flow rates to provide a first gas flow ratio of the hydrofluorocarbon gas to the oxygen-containing gas that is greater than 1;
1 and that is sufficient to etch the silicon nitride with greater etch selectivity to silicon nitride than to silicon; andb) for a second duration less than the first duration, flowing the hydrofluorocarbon gas and the oxygen-containing gas into the plasma processing system at respective second flow rates to provide a second gas flow ratio of the hydrofluorocarbon gas to the oxygen-containing gas that is less than the first gas flow ratio to form a protection layer of SiOF on exposed silicon surfaces at a thickness greater than a thickness of SiOF that forms on silicon nitride to protect the exposed silicon surfaces from etching during the next cycle of etching step a). - View Dependent Claims (20, 21)
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Specification