Semiconductor device and method of manufacturing the same

• US 9,318,610 B2
• Filed: 04/21/2014
• Issued: 04/19/2016
• Est. Priority Date: 02/22/2000
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Koyama, Jun
• Primary Examiner(s): Mandala, Victor A
• Application Number:
  US14/257,097
• Publication Number:
  US 20140225196A1
• Time in Patent Office: 729 Days
• US Class Current: 1/1
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/133512 Light shielding layers, e.g. black matrix G02F1/136209 takes precedence
• CPC Class Codes: G02F 1/133514 Colour filters
• CPC Class Codes: G02F 1/133784 by rubbing
• CPC Class Codes: G02F 1/13394 spacers regularly patterned on the cell subtrate, e.g. walls, pillars G02F1/133377 takes precedence
• CPC Class Codes: G02F 1/134336 Matrix
• CPC Class Codes: G02F 1/134363 for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/123 pixel
• CPC Class Codes: H01L 2029/7863 with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 : with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 : integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1274 : using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
• CPC Class Codes: H01L 27/1288 : employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/42384 : for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/458 : for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/4908 : for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/786 : Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/78621 : with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78627 : with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
• CPC Class Codes: H01L 29/78633 : with a light shield
• CPC Class Codes: H01L 29/78645 : with multiple gate
• CPC Class Codes: H01L 29/78675 : with normal-type structure, e.g. with top gate

Abstract

The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode (167) is arranged so as to partially overlap a source wiring (137) for shielding the gap between pixels from light, and a thin film transistor is arranged so as to partially overlap a gate wiring (166) for shielding a channel region of the thin film transistor from light, thereby realizing a high pixel aperture ratio.

Claims

1. A display device comprising:

a source wiring, wherein the source wiring includes a first conductive layer formed over an insulating surface, wherein a bottom face of the first conductive layer directly contacts the insulating surface,

a transistor including a gate electrode and a semiconductor layer, wherein the gate electrode includes a second conductive layer formed over and in contact with the insulating surface;

an insulating film formed over the transistor, the first conductive layer and the second conductive layer,

a gate wiring formed over and in contact with the insulating film, wherein the gate wiring is connected with the gate electrode; and

a third conductive layer over and in contact with the insulating film, wherein one of a source region and a drain region of the transistor is electrically connected to the source wiring through the third conductive layer.

2. The display device according to claim 1, wherein the display device is a liquid crystal device.

3. The display device according to claim 1, wherein the gate electrode is located over the semiconductor layer.

4. The display device according to claim 1, wherein the semiconductor layer comprises crystalline silicon.

5. The display device according to claim 1, further comprising a pixel electrode over the insulating film, wherein the pixel electrode is electrically connected to the other of the source region and the drain region of the transistor.

6. The display device according to claim 1, further comprising a red color filter overlapped with the semiconductor layer.

7. A display device comprising:

a source wiring, wherein the source wiring includes a first conductive layer formed over an insulating surface, wherein a bottom face of the first conductive layer contacts the insulating surface,

a transistor including a gate electrode and a semiconductor layer, wherein the gate electrode includes a second conductive layer formed over and in contact with the insulating surface;

an insulating film formed over the transistor, the first conductive layer and the second conductive layer,

a gate wiring formed over and in contact with the insulating film, wherein the gate wiring is connected with the gate electrode;

a third conductive layer over and in contact with the insulating film, wherein one of a source region and a drain region of the transistor is electrically connected to the source wiring through the third conductive layer; and

a capacitor wiring formed over and in contact with the insulating film, wherein the capacitor wiring extends in parallel with the gate wiring.

8. The display device according to claim 7, wherein the display device is a liquid crystal device.

9. The display device according to claim 7, wherein the gate electrode is located over the semiconductor layer.

10. The display device according to claim 7, wherein the semiconductor layer comprises crystalline silicon.

11. The display device according to claim 7, further comprising a pixel electrode over the insulating film, wherein the pixel electrode is electrically connected to the other of the source region and the drain region of the transistor.

12. The display device according to claim 7, further comprising a red color filter overlapped with the semiconductor layer.

13. A display device comprising:

a source wiring, wherein the source wiring includes a first conductive layer,

a transistor including a gate electrode and a semiconductor layer, wherein the gate electrode includes a second conductive layer;

an insulating film formed over the first conductive layer and the second conductive layer, wherein the insulating film is in contact with an upper surface of the first conductive layer and an upper surface of the second conductive layer,

a gate wiring formed over the insulating film, wherein the gate wiring is connected with the gate electrode; and

a third conductive layer over the insulating film, wherein one of a source region and a drain region of the transistor is electrically connected to the first conductive layer through the third conductive layer.

14. The display device according to claim 13, wherein the display device is a liquid crystal device.

15. The display device according to claim 13, wherein the gate electrode is located over the semiconductor layer.

16. The display device according to claim 13, wherein the semiconductor layer comprises crystalline silicon.

17. The display device according to claim 13, further comprising a pixel electrode over the insulating film, wherein the pixel electrode is electrically connected to the other of the source region and the drain region of the transistor.

18. The display device according to claim 13, wherein the gate wiring and the third conductive layer are formed by etching a same conductive layer.

19. The display device according to claim 13, further comprising a capacitor wiring over the insulating film, wherein the capacitor wiring extends in parallel with the gate wiring.

20. The display device according to claim 17, wherein the pixel electrode is in contact with the insulating film.

21. The display device according to claim 13, further comprising a red color filter overlapped with the semiconductor layer.