Organic light emitting diode display having thin film transistor substrate using oxide semiconductor
First Claim
1. An organic light emitting diode (OLED) display comprising:
- a gate electrode formed on a substrate;
a gate insulating layer formed on the gate electrode;
a semiconductor layer formed on the gate insulating layer to overlap with the gate electrode, and including a channel area and source and drain areas which extend from the channel area to lateral end portions, respectively, and are conductorized;
an etch stopper formed on the channel area and exposing the source area and the drain area;
a source electrode contacting portions of the exposed source area; and
a drain electrode contacting portions of the exposed drain area,wherein the source electrode and the drain electrode each include a first metal layer and a second metal layer stacked on the first metal layer,wherein the etch stopper formed on the channel area does not contact the source and drain electrodes,wherein the first metal layer and second metal layers of the source and drain electrodes have a substantially same shape and size, respectively, andwherein the conductorized source and drain areas extend from a top surface of the semiconductor layer to a bottom surface of the semiconductor layer.
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Accused Products
Abstract
Provided is a thin film transistor having an oxide semiconductor material for an organic light emitting diode display and a method for manufacturing the same. The organic light emitting diode display includes a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; a semiconductor layer formed on the gate insulating layer to overlap with the gate electrode, and including a channel area and source and drain areas which extend from the channel area to both outsides, respectively and are conductorized; an etch stopper formed on the channel area and exposing the source area and the drain area; a source electrode contacting portions of the exposed source electrode; and a drain electrode contacting portions of the exposed drain electrode.
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Citations
5 Claims
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1. An organic light emitting diode (OLED) display comprising:
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a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; a semiconductor layer formed on the gate insulating layer to overlap with the gate electrode, and including a channel area and source and drain areas which extend from the channel area to lateral end portions, respectively, and are conductorized; an etch stopper formed on the channel area and exposing the source area and the drain area; a source electrode contacting portions of the exposed source area; and a drain electrode contacting portions of the exposed drain area, wherein the source electrode and the drain electrode each include a first metal layer and a second metal layer stacked on the first metal layer, wherein the etch stopper formed on the channel area does not contact the source and drain electrodes, wherein the first metal layer and second metal layers of the source and drain electrodes have a substantially same shape and size, respectively, and wherein the conductorized source and drain areas extend from a top surface of the semiconductor layer to a bottom surface of the semiconductor layer. - View Dependent Claims (2, 3, 4, 5)
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Specification