Light-emitting display device and electronic device including the same
First Claim
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1. A display device comprising:
- a first conductive layer;
a second conductive layer serving as a signal line;
a third conductive layer;
a transistor comprising a channel formation region in an oxide semiconductor layer comprising indium, gallium and zinc, the oxide semiconductor layer being over the first conductive layer with a first insulating layer provided therebetween;
a second insulating layer over and in contact with the channel formation region; and
a pixel electrode,wherein the first conductive layer comprises a first region serving as a gate electrode of the transistor,wherein the channel formation region and the first region overlap with each other,wherein the first insulating layer and the second insulating layer each comprise silicon oxide,wherein the first conductive layer comprises a second region which extends through an edge of the oxide semiconductor layer in a channel width direction,wherein the first conductive layer comprises a third region whose width is smaller than a width of the first region,wherein the third region serves as a scan line,wherein the signal line is electrically connected to one of a source and a drain of the transistor,wherein the other of the source and the drain of the transistor is electrically connected to the third conductive layer,wherein the third conductive layer is electrically connected to the pixel electrode,wherein a part of the second conductive layer and a part of the third conductive layer are provided over the oxide semiconductor layer,wherein a first width of the oxide semiconductor layer in the channel width direction is larger than a length of the channel formation region,wherein a second width of the oxide semiconductor layer in a channel length direction is larger than the width of the third region, andwherein the second width is larger than the first width.
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Abstract
An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.
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Citations
27 Claims
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1. A display device comprising:
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a first conductive layer; a second conductive layer serving as a signal line; a third conductive layer; a transistor comprising a channel formation region in an oxide semiconductor layer comprising indium, gallium and zinc, the oxide semiconductor layer being over the first conductive layer with a first insulating layer provided therebetween; a second insulating layer over and in contact with the channel formation region; and a pixel electrode, wherein the first conductive layer comprises a first region serving as a gate electrode of the transistor, wherein the channel formation region and the first region overlap with each other, wherein the first insulating layer and the second insulating layer each comprise silicon oxide, wherein the first conductive layer comprises a second region which extends through an edge of the oxide semiconductor layer in a channel width direction, wherein the first conductive layer comprises a third region whose width is smaller than a width of the first region, wherein the third region serves as a scan line, wherein the signal line is electrically connected to one of a source and a drain of the transistor, wherein the other of the source and the drain of the transistor is electrically connected to the third conductive layer, wherein the third conductive layer is electrically connected to the pixel electrode, wherein a part of the second conductive layer and a part of the third conductive layer are provided over the oxide semiconductor layer, wherein a first width of the oxide semiconductor layer in the channel width direction is larger than a length of the channel formation region, wherein a second width of the oxide semiconductor layer in a channel length direction is larger than the width of the third region, and wherein the second width is larger than the first width. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A display device comprising:
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a first conductive layer; a second conductive layer serving as a signal line; a third conductive layer; a transistor comprising a channel formation region in an oxide semiconductor layer comprising indium, gallium and zinc, the oxide semiconductor layer being over the first conductive layer with a first insulating layer provided therebetween; a second insulating layer over and in contact with the channel formation region; and a pixel electrode, wherein the first conductive layer comprises a first region serving as a gate electrode of the transistor, wherein the channel formation region and the first region overlap with each other, wherein the first insulating layer and the second insulating layer each comprise silicon oxide, wherein the first conductive layer comprises a second region which extends through an edge of the oxide semiconductor layer in a channel width direction, wherein the first conductive layer comprises a third region whose width is smaller than a width of the first region, wherein the third region serves as a scan line, wherein the signal line is electrically connected to one of a source and a drain of the transistor, wherein the other of the source and the drain of the transistor is electrically connected to the third conductive layer, wherein the third conductive layer is electrically connected to the pixel electrode, wherein a part of the second conductive layer and a part of the third conductive layer overlaps with the oxide semiconductor layer, wherein a first width of the oxide semiconductor layer in the channel width direction is larger than a distance between the part of the second conductive layer and the part of the third conductive layer, wherein a second width of the oxide semiconductor layer in a channel length direction is larger than the width of the third region, and wherein the second width is larger than the first width. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A display device comprising:
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a first conductive layer; a second conductive layer serving as a signal line; a third conductive layer; a transistor comprising a channel formation region in an oxide semiconductor layer comprising indium, gallium and zinc, the oxide semiconductor layer being over the first conductive layer with a first insulating layer provided therebetween; a second insulating layer over and in contact with the channel formation region; and a pixel electrode, wherein the first conductive layer comprises a first region serving as a gate electrode of the transistor, wherein the channel formation region and the first region overlap with each other, wherein the first insulating layer and the second insulating layer each comprise silicon oxide, wherein the first conductive layer comprises a second region whose width is smaller than a width of the first region, wherein the second region serves as a scan line, wherein the signal line is electrically connected to one of a source and a drain of the transistor, wherein the other of the source and the drain of the transistor is electrically connected to the third conductive layer, wherein the third conductive layer is electrically connected to the pixel electrode, wherein a part of the second conductive layer and a part of the third conductive layer are provided over the oxide semiconductor layer, wherein the oxide semiconductor layer comprises a region that is overlapped with the pixel electrode, wherein a first width of the oxide semiconductor layer in a channel width direction is larger than a length of the channel formation region, wherein the first width is larger than the width of the second region, wherein a second width of the oxide semiconductor layer in a channel length direction is larger than the first width. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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22. A display device comprising:
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a first conductive layer; a second conductive layer serving as a wiring; a third conductive layer; a transistor comprising a channel formation region in an oxide semiconductor layer comprising indium, gallium and zinc, the oxide semiconductor layer being over the first conductive layer with a first insulating layer provided therebetween; a second insulating layer over and in contact with the channel formation region; and a pixel electrode, wherein the first conductive layer comprises a first region serving as a gate electrode of the transistor, wherein the channel formation region and the first region overlap with each other, wherein the first insulating layer and the second insulating layer each comprise silicon oxide, wherein the first conductive layer comprises a second region which extends through an edge of the oxide semiconductor layer in a channel width direction, wherein the first conductive layer comprises a third region whose width is smaller than a width of the first region, wherein the third region serves as a scan line, wherein the wiring is electrically connected to one of a source and a drain of the transistor, wherein the other of the source and the drain of the transistor is electrically connected to the third conductive layer, wherein the third conductive layer is electrically connected to the pixel electrode, wherein a part of the second conductive layer and a part of the third conductive layer are provided over the oxide semiconductor layer, wherein the oxide semiconductor layer comprises a region that is overlapped with the pixel electrode, wherein a first width of the oxide semiconductor layer in a channel length direction is larger than the width of the third region, and wherein the first width is larger than a second width of the oxide semiconductor layer in the channel width direction. - View Dependent Claims (23, 24, 25, 26, 27)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsArasawa, Ryo, Shishido, Hideaki
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Primary Examiner(s)Nguyen, Khiem D
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Application NumberUS13/936,355Publication NumberTime in Patent Office1,016 DaysField of Search257/59, 257/72, 257/E29.273, 438/149, 438/158US Class Current1/1CPC Class CodesH01L 27/1225 with semiconductor material...H01L 27/124 with a particular compositi...H01L 33/16 with a particular crystal s...
