Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced pattern

• US 9,318,695 B2
• Filed: 02/05/2015
• Issued: 04/19/2016
• Est. Priority Date: 07/26/2010
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Oh, Sechung, Lee, Jangeun, Kim, Woojin, Shin, Heeju
• Primary Examiner(s): Soward, Ida M
• Application Number:
  US14/614,724
• Publication Number:
  US 20150145081A1
• Time in Patent Office: 439 Days
• US Class Current: 1/1
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore, critical current density of the magnetic memory device may be reduced, such that power consumption of the magnetic memory device is reduced or minimized and/or the magnetic memory device is improved or optimized for a higher degree of integration.

Claims

1. A magnetic memory device comprising:

a reference pattern on a substrate;

a free pattern on the substrate;

a tunnel barrier pattern between the free pattern and the reference pattern; and

particles within the free pattern and comprising a nonmagnetic conductive material.

2. The magnetic memory device of claim 1, wherein the free pattern comprises a first surface and a second surface opposite to each other;

the first surface of the free pattern is adjacent to the tunnel barrier pattern; and

the particles are spaced from the first and second surfaces.

3. The magnetic memory device of claim 1, wherein the free pattern comprises a first surface adjacent to the tunnel barrier pattern and a second surface opposite to the first surface;

and

the reference pattern and the tunnel barrier pattern correspond to a first reference pattern and a first tunnel barrier pattern, respectively, and

further comprising;

a second reference pattern on the second surface of the free pattern; and

a second tunnel barrier pattern between the second surface of the free pattern and the second reference pattern.

4. The magnetic memory device of claim 1, wherein the reference pattern comprises a first magnetic material;

the free pattern comprises a second magnetic material;

each of the first and second magnetic materials comprises iron (Fe); and

a content ratio of iron (Fe) in the second magnetic material is equal to or greater than a content ratio of iron (Fe) in the first magnetic material.