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Low voltage embedded memory having cationic-based conductive oxide element

  • US 9,318,701 B2
  • Filed: 11/02/2015
  • Issued: 04/19/2016
  • Est. Priority Date: 11/27/2012
  • Status: Expired due to Fees
First Claim
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1. A non-volatile memory device, comprising:

  • a first conductive electrode;

    a cationic-based conductive oxide layer disposed on the first conductive electrode; and

    a second electrode disposed on the cationic-based conductive oxide layer;

    a transistor electrically connected to the first or the second electrode, a source line, and a word line; and

    a bit line electrically coupled with the other of the first or the second electrode.

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