Method of making an electronic interconnect

• US 9,318,862 B2
• Filed: 04/16/2014
• Issued: 04/19/2016
• Est. Priority Date: 06/02/2009
• Status: Active Grant

• Current Assignee: HSIO Technologies LLC
• Original Assignee: HSIO Technologies LLC
• Inventors: Rathburn, Jim
• Primary Examiner(s): Phan, Thiem
• Application Number:
  US14/254,038
• Publication Number:
  US 20140220797A1
• Time in Patent Office: 734 Days
• Field of Search: 298/46, 298/25, 298/29, 298/52, 298/74, 298/76, 298/77, 439/65, 439/66, 439/70, 439/81, 439/91, 439/620.22
• US Class Current: 1/1
• CPC Class Codes: H01R 12/714 with contacts abutting directly the printed circuit; Button contacts therefore provided on the printed circuit
• CPC Class Codes: H01R 13/193 Means for increasing contact pressure at the end of engagement of coupling part , e.g. zero insertion force or no friction
• CPC Class Codes: H01R 13/2442 with a single cantilevered beam
• CPC Class Codes: H01R 13/4361 Insertion of locking piece perpendicular to direction of contact insertion
• CPC Class Codes: H01R 43/18 for manufacturing bases or cases for contact members
• CPC Class Codes: Y10T 29/49155 Manufacturing circuit on or in base

Abstract

An electrical interconnect including a substrate with at least two adjacent layers configured to translate relative to each other between a nominal position and a translated position. A plurality of through holes are formed through the layers from a first surface of the substrate to a second surface of the substrate in both the nominal position and the translated position. At least one contact member is positioned in the through holes with distal portions accessible from the first surface and a proximal portions positioned near the second surface. The proximal portion of the contact members are secured to the substrate near the second surface with a conductive structure. The two adjacent layers of the substrate are translated from the nominal position to the translated position to elastically deform the contact members within the through holes and to displace the distal portions of the contact members toward the conductive structures, respectively.

Claims

1. A method of making an electrical interconnect comprising the steps of:

arranging a plurality of layers into a substrate with at least two adjacent layers configured to translate relative to each other between a nominal position and a translated position;

forming a plurality of through holes through the layers from a first surface of the substrate to a second surface of the substrate in both the nominal position and the translated position;

positioning at least one contact member in the through holes with distal portions accessible from the first surface of the substrate and a proximal portions positioned near the second surface;

securing the proximal portion of the contact members to the substrate near the second surface with a conductive structure; and

translating the two adjacent layers of the substrate from the nominal position to the translated position to elastically deform the contact members within the through holes of the substrate and to displace the distal portions of the contact members toward the conductive structures, respectively.

2. The method of claim 1 comprising engaging the contact members with a plurality of inner walls in the translated position.

3. The method of claim 1 comprising engaging the contact members at three or more locations in the through holes when in the translated position.

4. The method of claim 1 comprising engaging protrusion on one of the layers with center portions of the contact members in the translated position.

5. The method of claim 1 comprising positioning the distal ends of the contact members above the first surface of the substrate in the nominal position.

6. The method of claim 1 comprising attaching solder balls to the conductive structures at locations above the second surface of the substrate.

7. The method of claim 1 comprising forming the contact members as a multi-layered structure of conductive and non-conductive materials.

8. The method of claim 7 comprising the steps of:

depositing a liquid dielectric on a substrate;

imaging a liquid dielectric to form at least one recess extending from the proximal end to the distal end of the substrate; and

metalizing the recess to form a metalized layer.

9. The method of claim 8 comprising plating the metalized layer.

10. The method of claim 8 comprising configuring the recess and the metalized layer to comprises one of a coaxial line, a twin axial lines, or coaxial/twin axial via structure.