Tunable hybrid laser with carrier-induced phase control

• US 9,318,868 B2
• Filed: 09/06/2012
• Issued: 04/19/2016
• Est. Priority Date: 09/07/2011
• Status: Active Grant

• Current Assignee: Skorpios Technologies Inc.
• Original Assignee: Skorpios Technologies Inc.
• Inventors: Creazzo, Timothy, Mizrahi, Amit, Krasulick, Stephen B.
• Primary Examiner(s): Zhang, Yuanda
• Application Number:
  US13/605,633
• Publication Number:
  US 20130235890A1
• Time in Patent Office: 1,321 Days
• Field of Search: 372/12, 372/20, 372/29.023, 372/50.1, 372/50.11, 372/81, 372/102
• US Class Current: 1/1
• CPC Class Codes: H01S 3/10053 Phase control
• CPC Class Codes: H01S 3/1055 one of the reflectors being constituted by a diffraction grating
• CPC Class Codes: H01S 3/106 by controlling devices placed within the cavity H01S3/10076, H01S3/13 take precedence
• CPC Class Codes: H01S 5/0612 controlled by temperature
• CPC Class Codes: H01S 5/1007 Branched waveguides
• CPC Class Codes: H01S 5/142 which comprises an additional resonator

Abstract

A tunable laser includes a substrate comprising a silicon material, a gain medium coupled to the substrate, wherein the gain medium includes a compound semiconductor material, and a waveguide disposed in the substrate and optically coupled to the gain medium. The tunable laser also includes a first wavelength selective element characterized by a first reflectance spectrum and disposed in the substrate and a carrier-based phase modulator optically coupled to the first wavelength selective element. The tunable laser further includes a second wavelength selective element characterized by a second reflectance spectrum and disposed in the substrate, an optical coupler disposed in the substrate and optically coupled to the first wavelength selective element, the second wavelength selective element, and the waveguide, and an output mirror.

Claims

1. A tunable laser comprising:

a substrate comprising a silicon material and a recess;

a gain medium disposed in the recess in the substrate, wherein the gain medium includes a compound semiconductor material;

a waveguide disposed in the substrate and optically coupled to the gain medium;

a first wavelength selective element characterized by a first reflectance spectrum and disposed in the substrate;

a carrier-based phase modulator optically coupled to the first wavelength selective element, wherein the carrier-based phase modulator introduces charge carriers into a wave-guiding portion of the tunable laser between the gain medium and the first wavelength selective element to extinguish lasing of the tunable laser;

a second wavelength selective element characterized by a second reflectance spectrum and disposed in the substrate, wherein the second reflectance spectrum overlaps a portion of the first reflectance spectrum such that the tunable laser operates at a single-mode output;

an optical coupler disposed in the substrate and optically coupled to the first wavelength selective element, the second wavelength selective element, and the waveguide;

an output mirror; and

a phase adjustment section for correction of phase misalignment.

2. The tunable laser of claim 1 wherein the carrier-based phase modulator comprises a p-i-n diode optically coupled to a waveguide disposed between the optical coupler and the first wavelength selective element.

3. The tunable laser of claim 1 further comprising a second carrier-based phase modulator optically coupled to the second waveguide selective element.

4. The tunable laser of claim 3 wherein the second carrier-based phase modulator comprises a p-i-n diode optically coupled to a waveguide disposed between the optical coupler and the second wavelength selective element.

5. The tunable laser of claim 1 wherein the waveguide comprises a silicon material.

6. The tunable laser of claim 1 wherein the substrate comprises a silicon on insulator wafer.

7. The tunable laser of claim 1 wherein the carrier-based phase modulator comprises a p-i-n diode.

8. The tunable laser of claim 7 wherein the waveguide comprises an intrinsic portion of the p-i-n diode.

9. The tunable laser of claim 1 wherein the recess in the substrate comprises an interface and the gain medium has a facet separated from the interface by an index matching region.

10. The tunable laser of claim 1, the tunable laser further comprising a second waveguide, wherein:

the second waveguide is used to connect the optical coupler with the first wavelength selective element; and

the second waveguide is the wave-guiding portion of the tunable laser that the carrier-based phase modulator introduces charge carriers into.

11. The tunable laser of claim 10, the tunable laser further comprising:

a second carrier-based phase modulator; and

a third waveguide, wherein;

the third waveguide is used to connect the optical coupler with the second wavelength selective element; and

the second carrier-based phase modulator introduces charge carriers into the third waveguide.

12. The tunable laser of claim 1 wherein the phase adjustment section uses heat for correction of phase misalignment.

13. A method of operating a tunable laser, the method comprising:

providing a hybrid resonator cavity including a gain material and a waveguide structure coupled to the gain material, wherein the hybrid resonator cavity comprises a substrate having a recess and the gain material is disposed in the recess in the substrate;

transmitting light through the waveguide structure;

correcting phase misalignment of the light through the waveguide structure by heating a phase adjustment section;

splitting the waveguide structure into a set of reflection legs;

directing a first portion of the light in the waveguide structure to propagate through a first phase modulator;

directing a second portion of the light in the waveguide structure to propagate through a second phase modulator;

adjusting a phase in at least one of the first phase modulator or the second phase modulator by introducing charge carriers into a wave-guiding portion of the at least one of the first phase modulator or the second phase modulator;

reflecting light passing through the first phase modulator;

reflecting light passing through the second phase modulator; and

recombining light reflected from the set of reflection legs.

14. The method of claim 13 wherein the set of reflection legs comprises:

a first modulated grating reflector; and

a second modulated grating reflector.

15. The method of claim 14 wherein the first modulated grating reflector comprises a superstructure grating characterized by a first wavelength spacing between modes.

16. The method of claim 15 wherein the second modulated grating reflector comprises a superstructure grating characterized by a second wavelength spacing between modes different than the first wavelength spacing between modes, and the method further comprises aligning a mode of the first modulated grating reflector with a mode of the second modulated grating reflector.

17. The method of claim 13 wherein the waveguide structure comprises a silicon material.

18. The method of claim 17 wherein the silicon material comprises a silicon on insulator wafer.

19. The method of claim 13 wherein adjusting the phase in at least one of the first phase modulator or the second phase modulator comprises adjusting the phase in both the first phase modulator and the second phase modulator.

20. The method of claim 13 wherein the recess in the substrate comprises an interface and the gain medium has a facet separated from the interface by an index matching region.