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Method of forming a semiconductor socket

  • US 9,320,144 B2
  • Filed: 06/15/2010
  • Issued: 04/19/2016
  • Est. Priority Date: 06/17/2009
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor socket comprising the steps of:

  • providing a substrate with a plurality of through holes extending from a first surface to a second surface, the substrate having a plurality of recesses formed in the second surface that overlap with the through holes;

    preparing separate from the substrate a plurality of discrete contact members comprising distal portions with cantilever beams and proximal portions configured to reside in the recesses formed in the second surface of the substrate;

    mechanically inserting the distal portions of the discrete contact members in a plurality of the recesses so that the cantilever beams extend into the through holes and are located above the first surface of the substrate a sufficient amount to permit flexure when coupled with terminal on semiconductor devices, and the proximal ends positioned in the recesses and accessible from the second surface;

    depositing at least one dielectric layer selectively on the second surface of the substrate to create trace recesses corresponding to a target circuit geometry;

    depositing a conductive material in a plurality of the trace recesses to form conductive traces redistributing terminal pitch of the proximal ends of the contact members; and

    compressively engaging terminals on a first semiconductor device with the distal ends of the contact members to elastically deform and flex the cantilever beams toward the first surface of the substrate.

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