Method of forming a semiconductor socket
First Claim
1. A method of forming a semiconductor socket comprising the steps of:
- providing a substrate with a plurality of through holes extending from a first surface to a second surface, the substrate having a plurality of recesses formed in the second surface that overlap with the through holes;
preparing separate from the substrate a plurality of discrete contact members comprising distal portions with cantilever beams and proximal portions configured to reside in the recesses formed in the second surface of the substrate;
mechanically inserting the distal portions of the discrete contact members in a plurality of the recesses so that the cantilever beams extend into the through holes and are located above the first surface of the substrate a sufficient amount to permit flexure when coupled with terminal on semiconductor devices, and the proximal ends positioned in the recesses and accessible from the second surface;
depositing at least one dielectric layer selectively on the second surface of the substrate to create trace recesses corresponding to a target circuit geometry;
depositing a conductive material in a plurality of the trace recesses to form conductive traces redistributing terminal pitch of the proximal ends of the contact members; and
compressively engaging terminals on a first semiconductor device with the distal ends of the contact members to elastically deform and flex the cantilever beams toward the first surface of the substrate.
2 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor socket including a substrate with a plurality of through holes extending from a first surface to a second surface. A plurality of discrete contact members are located in the plurality of the through holes. The plurality of contact members each include a proximal end accessible from the second surface, and a distal end extending above the first surface. At least one dielectric layer is bonded to the second surface of the substrate with recesses corresponding to target circuit geometry. A conductive material deposited in at least a portion of the recesses to form conductive traces redistributing terminal pitch of the proximal ends of the contact members.
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Citations
13 Claims
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1. A method of forming a semiconductor socket comprising the steps of:
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providing a substrate with a plurality of through holes extending from a first surface to a second surface, the substrate having a plurality of recesses formed in the second surface that overlap with the through holes; preparing separate from the substrate a plurality of discrete contact members comprising distal portions with cantilever beams and proximal portions configured to reside in the recesses formed in the second surface of the substrate; mechanically inserting the distal portions of the discrete contact members in a plurality of the recesses so that the cantilever beams extend into the through holes and are located above the first surface of the substrate a sufficient amount to permit flexure when coupled with terminal on semiconductor devices, and the proximal ends positioned in the recesses and accessible from the second surface; depositing at least one dielectric layer selectively on the second surface of the substrate to create trace recesses corresponding to a target circuit geometry; depositing a conductive material in a plurality of the trace recesses to form conductive traces redistributing terminal pitch of the proximal ends of the contact members; and compressively engaging terminals on a first semiconductor device with the distal ends of the contact members to elastically deform and flex the cantilever beams toward the first surface of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of forming a semiconductor socket comprising the steps of:
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providing a substrate with a plurality of through holes extending from a first surface to a second surface, the substrate having a plurality of recesses formed in the second surface that overlap with the through holes; preparing separate from the substrate a plurality of discrete contact members comprising distal portions with cantilever beams and proximal portions configured to reside in the recesses formed in the second surface of the substrate; mechanically inserting the distal portions of the discrete contact members in a plurality of the recesses so that, the cantilever beams extend into the through holes and are located above the first surface of the substrate a sufficient amount to permit flexure when coupled with terminal on semiconductor devices, and the, proximal ends positioned in the recesses and accessible from the second surface; depositing at least one dielectric layer selectively on the second surface of the substrate to create trace recesses corresponding to a target circuit geometry; depositing a conductive material in a plurality of the trace recesses to form conductive traces redistributing terminal pitch of the proximal ends of the contact members; compressively engaging terminals on a first semiconductor device with the distal ends of the contact members to flex the cantilever beams toward the first surface of the substrate; attaching a solder ball to the conductive traces at a location offset from the proximal ends of the contact members; and electrically coupling the solder balls with terminals on a circuit member, wherein the circuit member is selected from one of a printed circuit board, a flexible circuit, a bare die device, an integrated circuit device, organic or inorganic substrates, or a rigid circuit.
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Specification