Method and system for forming a pattern on a reticle using charged particle beam lithography
First Claim
1. A method for fracturing or mask data preparation (MDP) for charged particle beam lithography, the method comprising:
- determining a plurality of charged particle beam shots that will produce a pattern on a reticle, wherein the reticle is to be used to form an aerial image on a resist-coated substrate using an optical lithographic process;
calculating a simulated reticle pattern that will be produced on the reticle from the plurality of charged particle beam shots;
calculating a calculated aerial image which will be formed on the resist-coated substrate using the optical lithographic process with the simulated reticle pattern; and
modifying a shot in the plurality of charged particle beam shots to improve the calculated aerial image,wherein the determining is performed using one or more computing hardware processors.
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Abstract
A method and system for fracturing or mask data preparation is disclosed in which a plurality of charged particle beam shots is determined which will produce a pattern on a reticle, where the reticle is to be used to form an aerial image on a resist-coated substrate using an optical lithographic process. A simulated reticle pattern is then calculated from the plurality of charged particle beam shots. A calculated aerial substrate image is then calculated using the simulated reticle pattern, and a shot in the plurality of shots is modified to improve the calculated aerial substrate image. Similar methods for forming a pattern on a reticle and for manufacturing an integrated circuit are also disclosed.
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Citations
26 Claims
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1. A method for fracturing or mask data preparation (MDP) for charged particle beam lithography, the method comprising:
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determining a plurality of charged particle beam shots that will produce a pattern on a reticle, wherein the reticle is to be used to form an aerial image on a resist-coated substrate using an optical lithographic process; calculating a simulated reticle pattern that will be produced on the reticle from the plurality of charged particle beam shots; calculating a calculated aerial image which will be formed on the resist-coated substrate using the optical lithographic process with the simulated reticle pattern; and modifying a shot in the plurality of charged particle beam shots to improve the calculated aerial image, wherein the determining is performed using one or more computing hardware processors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for forming a pattern on a reticle using charged particle beam lithography, the method comprising:
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determining a plurality of charged particle beam shots that will form the pattern on the reticle, wherein the reticle is to be used to form an aerial image on a resist-coated substrate using an optical lithographic process; calculating a simulated reticle pattern that will be produced on the reticle from the plurality of charged particle beam shots; calculating a calculated aerial image which will be formed on the resist-coated substrate using the optical lithographic process with the simulated reticle pattern; modifying a shot in the plurality of charged particle beam shots to improve the calculated aerial image; and forming the pattern on the reticle with the plurality of charged particle beam shots, including the modified shot. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A method for manufacturing an integrated circuit comprising a resist-coated substrate, the method comprising:
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determining a plurality of charged particle beam shots that will produce a pattern on a reticle, wherein the reticle is to be used to form an aerial image on the resist-coated substrate using an optical lithographic process; calculating a simulated reticle pattern that will be produced on the reticle from the plurality of charged particle beam shots; calculating a calculated aerial image which will be formed on the resist-coated substrate using the optical lithographic process with the simulated reticle pattern; modifying a shot in the plurality of charged particle beam shots to improve the calculated aerial image; and forming the pattern on the reticle with the plurality of charged particle beam shots, including the modified shot. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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22. A system for fracturing or mask data preparation (MDP) for charged particle beam lithography, the system comprising:
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a means for determining a plurality of charged particle beam shots that produce a pattern on a reticle, wherein the reticle is to be used to form an aerial image on a resist-coated substrate using an optical lithographic process; a means for calculating a simulated reticle pattern that will be produced on the reticle from the plurality of charged particle beam shots; a means for calculating a calculated aerial image which will be formed on resist-coated substrate using the optical lithographic process with the simulated reticle pattern; and a means for modifying a shot in the plurality of charged particle beam shots to improve the calculated aerial image. - View Dependent Claims (23, 24, 25, 26)
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Specification