Fuse element programming circuit and method
First Claim
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1. A circuit for programming a fuse element comprising:
- a memory cell having the fuse element that includes a first semiconductor material body region and a silicide layer;
a programming circuit configured to form a programming current to program the fuse element; and
a programming element configured to control a value of the programming current, the programming element having a second semiconductor material body region but not a silicide layer;
the programming circuit configured to control the programming current to a first value responsively to a value of the fuse element and to subsequently control the programming current to a different value responsively to a value of the programming element.
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Abstract
In one embodiment, a programming circuit is configured to form a programming current for a silicide fuse element by using a non-silicide programming element.
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Citations
11 Claims
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1. A circuit for programming a fuse element comprising:
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a memory cell having the fuse element that includes a first semiconductor material body region and a silicide layer; a programming circuit configured to form a programming current to program the fuse element; and a programming element configured to control a value of the programming current, the programming element having a second semiconductor material body region but not a silicide layer; the programming circuit configured to control the programming current to a first value responsively to a value of the fuse element and to subsequently control the programming current to a different value responsively to a value of the programming element. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of forming a programming circuit for a fuse element comprising:
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forming the fuse element having a first semiconductor layer and a silicide layer wherein the first semiconductor layer has a first resistivity and the silicide layer has a second resistivity; and configuring the programming circuit to control a value of a programming current through the fuse element using a programming element having a third resistivity that is substantially the first resistivity; configuring the programming circuit to form the programming current with a value to increase the first resistivity to a fourth resistivity and to decrease the programming current to a second value responsively to forming the fourth resistivity wherein the second value is greater than zero. - View Dependent Claims (9, 10, 11)
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Specification