Nonvolatile memory
First Claim
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1. A nonvolatile memory comprising:
- a memory area including a plurality of first magnetoresistive elements each serving as a memory element, each of the first magnetoresistive elements including a first storage layer, a first reference layer, and a first insulating film between the first storage layer and the first reference layer; and
a fuse circuit including a plurality of second magnetoresistive elements each serving as an anti-fuse element and configured to store correction information of the memory area when a defect exists in the memory area, each of the second magnetoresistive elements including a second storage layer, a second reference layer, and a second insulating film between the second storage layer and the second reference layer,wherein;
a resistance value of each of the plurality of first magnetoresistive elements changes between a first resistance value and a second resistance value higher than the first resistance value,each of the plurality of second magnetoresistive elements has one of the second resistance value and a third resistance value lower than the first resistance value, andthe second insulating film is broken in each second magnetoresistive element having the third resistance value among the plurality of second magnetoresistive elements.
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Abstract
According to one embodiment, a nonvolatile memory includes a memory area including a first magnetoresistive element, and a fuse circuit including a second magnetoresistive element serving as an anti-fuse element and configured to store correction information of the memory area when a defect exists in the memory area. The first magnetoresistive element includes a first storage layer, a first reference layer, and a first insulating film between the first storage layer and the first reference layer. The second magnetoresistive element includes a second storage layer, a second reference layer, and a second insulating film between the second storage layer and the second reference layer.
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Citations
20 Claims
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1. A nonvolatile memory comprising:
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a memory area including a plurality of first magnetoresistive elements each serving as a memory element, each of the first magnetoresistive elements including a first storage layer, a first reference layer, and a first insulating film between the first storage layer and the first reference layer; and a fuse circuit including a plurality of second magnetoresistive elements each serving as an anti-fuse element and configured to store correction information of the memory area when a defect exists in the memory area, each of the second magnetoresistive elements including a second storage layer, a second reference layer, and a second insulating film between the second storage layer and the second reference layer, wherein; a resistance value of each of the plurality of first magnetoresistive elements changes between a first resistance value and a second resistance value higher than the first resistance value, each of the plurality of second magnetoresistive elements has one of the second resistance value and a third resistance value lower than the first resistance value, and the second insulating film is broken in each second magnetoresistive element having the third resistance value among the plurality of second magnetoresistive elements. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A nonvolatile memory comprising:
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a first memory area including a plurality of first magnetoresistive elements, each of the first magnetoresistive elements including a first storage layer, a first reference layer, and a first insulating film between the first storage layer and the first reference layer; and a second memory area including a plurality of second magnetoresistive elements, each of the second magnetoresistive elements including a second storage layer, a second reference layer, and a second insulating film between the second storage layer and the second reference layer, wherein; when a defect exists in the first memory area, the second memory area stores correction information of the first memory area, a resistance value of each of the plurality of first magnetoresistive elements changes between a first resistance value and a second resistance value higher than the first resistance value, each of the plurality of second magnetoresistive elements has one of the second resistance value and a third resistance value lower than the first resistance value, and the second insulating film is broken in each second magnetoresistive element having the third resistance value among the plurality of second magnetoresistive elements.
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11. A nonvolatile memory comprising:
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a memory area including a plurality of first magnetoresistive elements each serving as a memory element, each of the first magnetoresistive elements including a first storage layer, a first reference layer, and a first insulating film between the first storage layer and the first reference layer; and a fuse circuit including a plurality of second magnetoresistive elements each serving as an anti-fuse element and configured to store correction information of the memory area when a defect exists in the memory area, each of the second magnetoresistive elements including a second storage layer, a second reference layer, and a second insulating film between the second storage layer and the second reference layer, wherein the fuse circuit includes a plurality of fuse elements each configured to store at least part of the correction information. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification