×

Plasma etching method, method for producing semiconductor device, and plasma etching device

  • US 9,324,572 B2
  • Filed: 03/03/2011
  • Issued: 04/26/2016
  • Est. Priority Date: 03/04/2010
  • Status: Active Grant
First Claim
Patent Images

1. A plasma etching method comprising:

  • setting a pressure in a processing container as 300-500 mTorr by supplying a processing gas into the processing container while exhausting the processing gas;

    generating plasma by supplying a microwave to the processing gas; and

    setting a bias applied to a holding stage, on which a substrate is placed, in the processing container to be a predetermined value, to selectively etch a sidewall spacer formed of a silicon nitride film with respect to a base formed of polysilicon while leaving an offset spacer, wherein the selective etching is performed to the substrate having a structure where an electrode is formed on the base, the offset spacer is formed on side walls of the electrode, and the sidewall spacer is formed on side walls of the offset spacer,wherein the processing gas includes a plasma excitation gas including at least one of Ar, He, Ne, Kr, and Xe, a CHF-based gas consisting of CH2F2, and an oxidizing gas consisting of O2, anda ratio of a flow rate of the oxidizing gas with respect to a flow rate of the CHF-based gas is set to be 4/9 or greater and 8/9 or less, and the flow rate of the oxidizing gas being 17 sccm or greater such that the oxidizing gas is excessively supplied to be greater than an amount required to remove CF-based deposits, thus, a surface of the base is etched while being oxidized as a silicon oxide film, a surface of the sidewall spacer is etched while being oxidized as a silicon oxynitride film, and a predetermined etching selectivity of the sidewall spacer with respect to the base is obtained due to a difference between an etching rate to the silicon oxide film and an etching rate to the silicon oxynitride film.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×