Plasma etching method, method for producing semiconductor device, and plasma etching device

• US 9,324,572 B2
• Filed: 03/03/2011
• Issued: 04/26/2016
• Est. Priority Date: 03/04/2010
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Moyama, Kazuki, Sasaki, Masaru, Inoue, Masaki, Noto, Yoko
• Primary Examiner(s): Tran, Binh X
• Assistant Examiner(s): Cathey, Jr., David
• Application Number:
  US13/582,523
• Publication Number:
  US 20130029494A1
• Time in Patent Office: 1,881 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32238 Windows
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 29/6653 using the removal of at least part of spacer, e.g. disposable spacer
• CPC Class Codes: H01L 29/6659 with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/7833 with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's for thin film transistors H01L29/78618

Abstract

Provided is a plasma etching method increasing the selectivity of a silicon nitride film in relation to the silicon oxide film or silicon functioning as a base. In a plasma etching method setting a pressure in a processing container as a predetermined level by exhausting a processing gas while supplying the processing gas into the processing container, generating plasma by supplying external energy to the processing container, and setting a bias applied to a holding stage holding a substrate in the processing container as predetermined value to selectively etch the silicon nitride film with respect to a silicon and/or silicon oxide film, the processing gas includes a plasma excitation gas, a CHxFy gas, and at least one oxidizing gas selected from the group consisting of O₂, CO₂, CO, and a flow rate of the oxidizing gas with respect to the CHxFy gas is set to be 4/9 or greater.

Claims

1. A plasma etching method comprising:

setting a pressure in a processing container as 300-500 mTorr by supplying a processing gas into the processing container while exhausting the processing gas;

generating plasma by supplying a microwave to the processing gas; and

setting a bias applied to a holding stage, on which a substrate is placed, in the processing container to be a predetermined value, to selectively etch a sidewall spacer formed of a silicon nitride film with respect to a base formed of polysilicon while leaving an offset spacer, wherein the selective etching is performed to the substrate having a structure where an electrode is formed on the base, the offset spacer is formed on side walls of the electrode, and the sidewall spacer is formed on side walls of the offset spacer,

wherein the processing gas includes a plasma excitation gas including at least one of Ar, He, Ne, Kr, and Xe, a CHF-based gas consisting of CH₂F₂, and an oxidizing gas consisting of O₂, and

a ratio of a flow rate of the oxidizing gas with respect to a flow rate of the CHF-based gas is set to be 4/9 or greater and 8/9 or less, and the flow rate of the oxidizing gas being 17 sccm or greater such that the oxidizing gas is excessively supplied to be greater than an amount required to remove CF-based deposits, thus, a surface of the base is etched while being oxidized as a silicon oxide film, a surface of the sidewall spacer is etched while being oxidized as a silicon oxynitride film, and a predetermined etching selectivity of the sidewall spacer with respect to the base is obtained due to a difference between an etching rate to the silicon oxide film and an etching rate to the silicon oxynitride film.

2. The plasma etching method of claim 1, wherein a microwave is introduced in the processing container via a dielectric window on an upper portion of the processing container as the external energy, and a radio frequency (RF) of 30 W/(15×

15×

π

cm²) or less per 1 cm² of the substrate is applied to a holding stage where the substrate is placed in the processing container.

3. The plasma etching method of claim 1, wherein the plasma etching method is to form spacers formed of a silicon nitride film on side walls of a gate electrode.

4. A method for producing a semiconductor device, the method comprising:

setting a pressure in a processing container as 300-500 mTorr by supplying a processing gas into the processing container while exhausting the processing gas;

generating plasma by supplying a microwave to the processing gas; and

setting a bias applied to a holding stage, on which a substrate is placed, in the processing container to be a predetermined value, to selectively etch a sidewall spacer formed of a silicon nitride film with respect to a base formed of polysilicon while leaving an offset spacer, wherein the selective etching is performed to the substrate having a structure where an electrode is formed on the base, the offset spacer is formed on side walls of the electrode, and the sidewall spacer is formed on side walls of the offset spacer;

wherein the processing gas includes a plasma excitation gas including at least one of Ar, He, Ne, Kr, and Xe, a CHF-based gas consisting of CH₂F₂, and an oxidizing gas consisting of O₂, and

a ratio of a flow rate of the oxidizing gas with respect to a flow rate of the CHF-based gas is set to be 4/9 or greater and 8/9 or less, and the flow rate of the oxidizing gas being 17 sccm or greater such that the oxidizing gas is excessively supplied to be greater than an amount required to remove CF-based deposits, thus, a surface of the base is etched while being oxidized as a silicon oxide film, a surface of the sidewall spacer is etched while being oxidized as a silicon oxynitride film, and a predetermined etching selectivity of the sidewall spacer with respect to the base is obtained due to a difference between an etching rate to the silicon oxide film and an etching rate to the silicon oxynitride film.