Method and system for co-packaging vertical gallium nitride power devices

• US 9,324,645 B2
• Filed: 05/23/2013
• Issued: 04/26/2016
• Est. Priority Date: 05/23/2013
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Avogy Inc.
• Inventors: Disney, Donald R., Shah, Hemal N.
• Primary Examiner(s): BACHNER, ROBERT G
• Application Number:
  US13/901,546
• Publication Number:
  US 20140346522A1
• Time in Patent Office: 1,069 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/291 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/293 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/40247 Connecting the strap to a bond pad of the item
• CPC Class Codes: H01L 2224/45014 Ribbon connectors, e.g. rectangular cross-section
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 2224/83805 involving forming a eutectic alloy at the bonding interface
• CPC Class Codes: H01L 2224/8384 Sintering
• CPC Class Codes: H01L 23/49541 Geometry of the lead-frame
• CPC Class Codes: H01L 23/49575 Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 29/2003 : Nitride compounds
• CPC Class Codes: H01L 29/8611 : Planar PN junction diodes
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13062 : Junction field-effect transistor [JFET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/206 : Length ranges
• CPC Class Codes: H01L 2924/20755 : larger or equal to 50 microns less than 60 microns
• CPC Class Codes: H01L 2924/20756 : larger or equal to 60 microns less than 70 microns
• CPC Class Codes: H01L 2924/20757 : larger or equal to 70 microns less than 80 microns
• CPC Class Codes: H01L 2924/20758 : larger or equal to 80 microns less than 90 microns
• CPC Class Codes: H01L 2924/20759 : larger or equal to 90 microns less than 100 microns
• CPC Class Codes: H01L 2924/2076 : equal to or larger than 100 microns

Abstract

An electronic package includes a leadframe and a plurality of pins. The electronic package also includes a first gallium nitride (GaN) transistor comprising a source, gate, and drain and a second GaN transistor comprising a source, gate, and drain. The source of the first GaN transistor is electrically connected to the leadframe and the drain of the second GaN transistor is electrically connected to the leadframe. The electronic package further includes a first GaN diode comprising an anode and cathode and a second GaN diode comprising an anode and cathode. The anode of the first GaN diode is electrically connected to the leadframe and the cathode of the second GaN diode is electrically connected to the leadframe.

Claims

1. An electronic package comprising:

a leadframe;

a plurality of pins;

a first gallium nitride (GaN) transistor comprising a source, gate, and drain, wherein the source of the first GaN transistor has a surface in contact with the leadframe and is electrically connected to the leadframe;

a second GaN transistor comprising a source, gate, and drain, wherein the drain of the second GaN transistor is electrically connected to the leadframe;

a first GaN diode comprising an anode and cathode, wherein the anode of the first GaN diode is electrically connected to the leadframe; and

a second GaN diode comprising an anode and cathode, wherein the cathode of the second GaN diode is electrically connected to the leadframe.

2. The electronic package of claim 1 wherein:

the drain of the first GaN transistor and the cathode of the first diode is electrically connected to a first pin of the plurality of pins;

the gate of the first GaN transistor is electrically connected to a second pin of the plurality of pins;

the source of the second GaN transistor and the anode of the second diode is electrically connected to a third pin of the plurality of pins; and

the gate of the second GaN transistor is electrically connected to a fourth pin of the plurality of pins.

3. The electronic package of claim 2 wherein the electrical connections of the drain of the first GaN transistor and the source and gate of the second GaN transistor comprise at least one of wire bonds, ribbon bonds, or copper clips.

4. The electronic package of claim 1 wherein:

the electrical connection between the anode of the first diode and the leadframe comprises at least one of epoxy, eutectic, sintering, or solder; and

the electrical connection between the cathode of the second diode and the leadframe comprises at least one of epoxy, eutectic, sintering, or solder.

5. The electronic package of claim 1 wherein:

the electrical connection between the drain of the second GaN transistor and the leadframe comprises at least one of epoxy, eutectic, sintering, or solder; and

the electrical connection between the source of the first GaN transistor and the leadframe comprises at least one of epoxy, eutectic, sintering, or solder.

6. The electronic package of claim 2 wherein the second pin of the plurality of pins extends under a gate pad of the first GaN transistor and the electrical connection between the gate of the first GaN transistor and the second pin of the plurality of pins comprises at least one of epoxy, eutectic, sintering, or solder.

7. The electronic package of claim 1 wherein the gallium nitride-based electronics package is electrically coupled and attached to a circuit board, wherein the leadframe is configured to conduct current from the source of the first GaN transistor, the drain of the second GaN transistor, the anode of the first GaN diode, and the cathode of the second GaN diode directly to the circuit board.

8. The electronic package of claim 1 further comprising one or more heat sinks attached to the leadframe.

9. The electronic package of claim 1 wherein the drain of the second GaN transistor and the source and the gate of the first GaN transistor comprises a solderable metal stack.

10. The electronic package of claim 1 wherein the drain of the first GaN transistor and the gate and source of the second GaN transistor comprises a bondable metal stack.

11. The electronic package of claim 1 wherein the source of the second GaN transistor is electrically connected to a fifth pin of the plurality of pins.