Semiconductor device and fabricating method thereof
First Claim
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1. A semiconductor device comprising:
- a substrate including a first surface;
an interlayer insulating film disposed on the first surface of the substrate and including a trench;
a gate insulating film disposed in the trench;
a first work function adjusting film disposed in the trench, and disposed on or above the gate insulating film;
a second work function adjusting film disposed in the trench, and disposed on the first work function adjusting film; and
a metal gate pattern disposed on or above the second work function adjusting film, and filling the trench,wherein the first work function adjusting film includes a first portion extending along a first sidewall of the trench, a second portion extending along a second sidewall of the trench and a third portion extending along a bottom surface of the trench,the first portion of the first work function adjusting film includes a top surface that is inclined with respect to the first surface of the substrate, andan uppermost point of the second work function adjusting film is below an uppermost point of the first work function adjusting film.
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Abstract
A semiconductor device includes an interlayer insulating film formed on a substrate and including a trench, a gate insulating film formed in the trench, a work function adjusting film formed on the gate insulating film in the trench along sidewalls and a bottom surface of the trench, and including an inclined surface having an acute angle with respect to the sidewalls of the trench, and a metal gate pattern formed on the work function adjusting film in the trench to fill up the trench.
22 Citations
19 Claims
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1. A semiconductor device comprising:
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a substrate including a first surface; an interlayer insulating film disposed on the first surface of the substrate and including a trench; a gate insulating film disposed in the trench; a first work function adjusting film disposed in the trench, and disposed on or above the gate insulating film; a second work function adjusting film disposed in the trench, and disposed on the first work function adjusting film; and a metal gate pattern disposed on or above the second work function adjusting film, and filling the trench, wherein the first work function adjusting film includes a first portion extending along a first sidewall of the trench, a second portion extending along a second sidewall of the trench and a third portion extending along a bottom surface of the trench, the first portion of the first work function adjusting film includes a top surface that is inclined with respect to the first surface of the substrate, and an uppermost point of the second work function adjusting film is below an uppermost point of the first work function adjusting film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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a substrate including a first surface; an interlayer insulating film disposed on the first surface of the substrate, and including a first trench and a second trench which are separated from each other; an NMOS transistor including a first metal gate formed in the first trench; and a PMOS transistor including a second metal gate formed in the second trench, wherein the first metal gate includes a first N-type work function adjusting film formed along a first sidewall, a second sidewall and a bottom surface of the first trench, the second metal gate includes a P-type work function adjusting film and a second N-type work function adjusting film which are stacked along a first sidewall, a second sidewall and a bottom surface of the second trench, the second N-type work function adjusting film includes a first portion extending along the first sidewall of the second trench, a second portion extending along the second sidewall of the second trench and a third portion extending along the bottom surface of the second trench, the first portion of the second N-type work function adjusting film includes a top surface that farms an acute angle with respect to a first sidewall of the first portion of the second N-type work function adjusting film, the first sidewall of the first portion of the second N-type work function adjusting film contacting the P-type work function adjusting film, the top surface of the first portion of the second N-type work function adjusting film being inclined with respect to the bottom surface of the second trench, and an uppermost point of the second N-type work function adjusting film is below an uppermost point of the P-type work function adjusting film. - View Dependent Claims (14)
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15. A semiconductor device comprising:
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a substrate; an interlayer insulating film disposed on the substrate and including a trench; a gate insulating film formed in the trench; a first TiN film formed on the gate insulating film; a TaN film formed on the first TiN film; a second TiN film formed on the TaN film; and a TiAl film formed on the second TiN film, wherein at least one of the second TiN film and the TiAl film includes a first portion extending along a first sidewall of the trench, a second portion extending along a second sidewall of the trench and a third portion extending along a bottom surface of the trench, and the first portion includes a top surface that is inclined with respect to the bottom surface of the trench. - View Dependent Claims (16)
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17. A semiconductor device, comprising:
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a substrate; an interlayer insulating film disposed on the substrate and including a trench; a gate insulating film disposed on a first sidewall, a second sidewall and a bottom surface of the trench; a first work function adjusting film disposed on or above the gate insulating film, the first work function adjusting film having a first sidewall, a second sidewall and a bottom surface; a second work function adjusting film disposed between the first work function adjusting film and the gate insulating film; a metal gate pattern disposed on or above the first work function adjusting film, wherein a top surface of the first sidewall of the first work function adjusting film and a top surface of the second sidewall of the first work function adjusting film are chamfered, at least one of the top surface of the first sidewall of the first work function adjusting film and the top surface of the second sidewall of the first work function adjusting film is below a top surface of the metal gate pattern, and an uppermost point of the second work function adjusting film is below an uppermost point of the first work function adjusting film. - View Dependent Claims (18, 19)
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Specification