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Method of manufacturing semiconductor device

  • US 9,324,763 B2
  • Filed: 07/16/2015
  • Issued: 04/26/2016
  • Est. Priority Date: 07/29/2014
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, comprising the steps of:

  • (a) providing a substrate having a first main surface and a second main surface on the side opposite to the first main surface and forming a plurality of semiconductor elements over the first main surface of the substrate to form a semiconductor wafer;

    (b) providing an annular ring to which an adhesive tape has been attached;

    (c) attaching the semiconductor wafer onto the adhesive tape so that the second main surface of the semiconductor wafer faces the adhesion surface of the adhesive tape located in the ring;

    (d) dicing the semiconductor wafer into a plurality of semiconductor chips to form a sawn wafer in which the plurality of semiconductor chips are retained by the ring while being attached to the adhesive tape;

    (e) after the step (d), housing the sawn wafer in a shipping case having a first case portion that covers a first surface of the sawn wafer to which the semiconductor chips have been attached and a second case portion that covers a second surface of the sawn wafer on the side opposite to the first surface and thereby fixing the ring;

    (f) after the step (e), housing the shipping case in a shipping bag; and

    (g) after the step (f), sucking a gas from the shipping bag to reduce a pressure in the shipping case,wherein the first case portion has, in the step (e), a first recess portion that covers the semiconductor chips and a first ventilation route communicated with the first recess portion and coupled to an external space of the shipping case;

    wherein the second case portion has, in the step (e), a second recess portion that covers the second surface of the sawn wafer; and

    wherein in the step (g), a gas is discharged from the shipping case via the first ventilation route.

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