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System and method of shared bit line MRAM

  • US 9,324,768 B1
  • Filed: 12/03/2014
  • Issued: 04/26/2016
  • Est. Priority Date: 12/03/2014
  • Status: Active Grant
First Claim
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1. A spin-transfer torque (STT) magnetic memory, comprising:

  • a plurality of columns of STT magnetic memory elements, wherein the STT magnetic memory elements comprise a top electrode and a bottom electrode;

    a plurality of shared bit lines, overlaying the plurality of columns of STT magnetic memory elements, wherein at least one of the plurality of shared bit lines is coupled to the top electrode of the STT magnetic memory elements of a group of at least two of the plurality of columns of STT magnetic memory elements; and

    a plurality of source lines, each of the plurality of source lines switchably coupled to the bottom electrode of a STT magnetic memory element of a corresponding one of the plurality of columns of STT magnetic memory elements.

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