Light emitting device
First Claim
Patent Images
1. A display device including a pixel portion, the pixel portion comprising:
- a semiconductor layer over a substrate;
a gate insulating film over the semiconductor layer;
a gate electrode over the gate insulating film, the gate electrode overlapping with the semiconductor layer;
a transistor;
a first insulating film over the gate electrode, the gate insulating film, and the transistor;
a first wiring over the first insulating film, the first wiring electrically connected to the semiconductor layer through a contact hole in the gate insulating film and the first insulating film;
a second insulating film over the first wiring;
a third insulating film over the second insulating film, the third insulating film including a region where the third insulating film is removed;
a pixel electrode over and in contact with the third insulating film, the pixel electrode electrically connected to the transistor; and
a second wiring over and in contact with the third insulating film,wherein the semiconductor layer comprises silicon, andwherein the region overlaps with the contact hole.
1 Assignment
0 Petitions
Accused Products
Abstract
A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
69 Citations
20 Claims
-
1. A display device including a pixel portion, the pixel portion comprising:
-
a semiconductor layer over a substrate; a gate insulating film over the semiconductor layer; a gate electrode over the gate insulating film, the gate electrode overlapping with the semiconductor layer; a transistor; a first insulating film over the gate electrode, the gate insulating film, and the transistor; a first wiring over the first insulating film, the first wiring electrically connected to the semiconductor layer through a contact hole in the gate insulating film and the first insulating film; a second insulating film over the first wiring; a third insulating film over the second insulating film, the third insulating film including a region where the third insulating film is removed; a pixel electrode over and in contact with the third insulating film, the pixel electrode electrically connected to the transistor; and a second wiring over and in contact with the third insulating film, wherein the semiconductor layer comprises silicon, and wherein the region overlaps with the contact hole. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A display device including a pixel portion, the pixel portion comprising:
-
a plastic substrate; a semiconductor layer over the plastic substrate; a gate insulating film over the semiconductor layer; a gate electrode over the gate insulating film, the gate electrode overlapping with the semiconductor layer; a transistor; a first insulating film over the gate electrode, the gate insulating film, and the transistor; a first wiring over the first insulating film, the first wiring electrically connected to the semiconductor layer through a contact hole in the gate insulating film and the first insulating film; a second insulating film over the first wiring; a third insulating film over the second insulating film, the third insulating film including a region where the third insulating film is removed; a pixel electrode over and in contact with the third insulating film, the pixel electrode electrically connected to the transistor; and a second wiring over and in contact with the third insulating film, wherein the semiconductor layer comprises silicon, and wherein the region overlaps with the contact hole. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
-
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
InventorsYamazaki, Shunpei, Koyama, Jun, Arao, Tatsuya, Azami, Munehiro
-
Primary Examiner(s)Malsawma, Lex
-
Application NumberUS14/920,972Publication NumberTime in Patent Office186 DaysField of SearchUS Class Current1/1CPC Class CodesH01L 27/124 with a particular compositi...H01L 27/1255 integrated with passive dev...H01L 29/78633 with a light shieldH10K 59/1213 the pixel elements being TFTsH10K 59/1216 the pixel elements being ca...H10K 59/122 Pixel-defining structures o...H10K 59/124 Insulating layers formed be...H10K 59/131 Interconnections, e.g. wiri...
